Pagina 171 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10D-5310E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione3.520	-	-	-	-	-	-	-	-	-	-	-
MBRH20020RL	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	pacchetto: D-67	Azione3.840	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MPG06GHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: MPG06, Axial	Azione3.424	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
1N4448_T50A	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AH, DO-35, Axial	Azione6.272	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
S2A	Micro Commercial Co	DIODE GEN PURP 50V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMBJ) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione1.920.000	50V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2µs	10µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMBJ)	-55°C ~ 150°C
1N4534UR	Microsemi Corporation	DIODE SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione7.600	-	-	-	-	-	-	-	-	-	-	-
UFS310GE3/TR13	Microsemi Corporation	DIODE GEN PURP 100V 3A DO215AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-215AB, SMC Gull Wing	Azione5.936	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
SR1502HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 15A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: R6, Axial	Azione6.272	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SBRT15U50SP5-7	Diodes Incorporated	DIODE SBR 50V 15A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: PowerDI? 5	Azione3.056	50V	15A	470mV @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	PowerDI? 5	PowerDI?5	-65°C ~ 150°C
ES3G-M3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione5.056	400V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
S1PK-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-220AA	Azione216.000	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 800V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
V35PWM45HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 35A 45V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 670mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.1mA @ 45V Capacitance @ Vr, F: 4020pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione3.952	45V	35A	670mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.1mA @ 45V	4020pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
V30100S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 30A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-220-3	Azione9.132	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
STTH310	STMicroelectronics	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: DO-201AD, Axial	Azione3.536	1000V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 175°C
NTE6081	NTE Electronics, Inc	DIODE SCHOTTKY 45V 16A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	45 V	16A	630 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 150°C
SFT18G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione15.000	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
PCDP0465GB_T0_00601	Panjit International Inc.	650V SIC SCHOTTKY BARRIER DIODE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione5.850	650 V	4A	1.6 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	260pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
1N2430R	Solid State Inc.	DIODE GEN PURP REV 250V 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 250 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	250 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 250 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
S5JB-HF	Comchip Technology	DIODE GP 600V 5A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	600 V	5A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
UGA8120	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.2KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	1200 V	8A	2.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	5 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
S4240	Microchip Technology	DIODE GEN PURP 400V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	400 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 400 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
B320AQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 20V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione11.037	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
RS2MAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 2A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione74.610	1000 V	2A	1.05 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
UGS5JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione2.397	600 V	5A	2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	20 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
HS3DB	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione18.000	200 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
V7N103-M3-H	Vishay	7A, 100V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 330 µA @ 100 V Capacitance @ Vr, F: 860pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: -	Request a Quote	100 V	7A	660 mV @ 7 A	Fast Recovery =< 500ns, > 200mA (Io)	-	330 µA @ 100 V	860pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
HVC142KRF-E	Renesas Electronics Corporation	DIODE FOR ANTENNA SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SCS220AGC17	Rohm Semiconductor	DIODE SIC 650V 20A TO220ACFP Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 400 µA @ 600 V Capacitance @ Vr, F: 730pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C	pacchetto: -	Azione2.220	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C

RGP10D-5310E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione3.520

-

MBRH20020RL

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

pacchetto: D-67

Azione3.840

20V

200A

580mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MPG06GHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: MPG06, Axial

Azione3.424

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

1N4448_T50A

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

Azione6.272

100V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

S2A

Micro Commercial Co

DIODE GEN PURP 50V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione1.920.000

50V

2A

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

2µs

10µA @ 50V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMBJ)

-55°C ~ 150°C

1N4534UR

Microsemi Corporation

DIODE SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione7.600

-

UFS310GE3/TR13

Microsemi Corporation

DIODE GEN PURP 100V 3A DO215AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-215AB, SMC Gull Wing

Azione5.936

100V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 100V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 175°C

SR1502HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: R6, Axial

Azione6.272

20V

15A

550mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

R6, Axial

R-6

-50°C ~ 150°C

SBRT15U50SP5-7

Diodes Incorporated

DIODE SBR 50V 15A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: PowerDI? 5

Azione3.056

50V

15A

470mV @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

500µA @ 50V

-

Surface Mount

PowerDI? 5

PowerDI?5

-65°C ~ 150°C

ES3G-M3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione5.056

400V

3A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

S1PK-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-220AA

Azione216.000

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 800V

6pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

V35PWM45HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 45V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.1mA @ 45V
Capacitance @ Vr, F: 4020pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione3.952

45V

35A

670mV @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.1mA @ 45V

4020pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 175°C

V30100S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 30A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-220-3

Azione9.132

100V

30A

910mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Through Hole

TO-220-3

TO-220AB

-40°C ~ 150°C

STTH310

STMicroelectronics

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: DO-201AD, Axial

Azione3.536

1000V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

-

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 175°C

NTE6081

NTE Electronics, Inc

DIODE SCHOTTKY 45V 16A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

45 V

16A

630 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

-

Through Hole

TO-220-2

-65°C ~ 150°C

SFT18G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione15.000

600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

PCDP0465GB_T0_00601

Panjit International Inc.

650V SIC SCHOTTKY BARRIER DIODE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione5.850

650 V

4A

1.6 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 650 V

260pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

1N2430R

Solid State Inc.

DIODE GEN PURP REV 250V 100A DO8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 250 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 250 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

250 V

100A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 250 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

S5JB-HF

Comchip Technology

DIODE GP 600V 5A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

600 V

5A

1.1 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

UGA8120

Taiwan Semiconductor Corporation

DIODE GEN PURP 1.2KV 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

1200 V

8A

2.8 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

70 ns

5 µA @ 1200 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

S4240

Microchip Technology

DIODE GEN PURP 400V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

400 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 400 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

B320AQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione11.037

20 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

RS2MAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 2A THIN SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione74.610

1000 V

2A

1.05 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

1 µA @ 1000 V

10pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

UGS5JH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione2.397

600 V

5A

2 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

20 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

HS3DB

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione18.000

200 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 200 V

80pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

V7N103-M3-H

Vishay

7A, 100V, DFN3820A TRENCH SKY RE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

Request a Quote

100 V

7A

660 mV @ 7 A

Fast Recovery =< 500ns, > 200mA (Io)

-

330 µA @ 100 V

860pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 150°C

HVC142KRF-E

Renesas Electronics Corporation

DIODE FOR ANTENNA SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

SCS220AGC17

Rohm Semiconductor

DIODE SIC 650V 20A TO220ACFP

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C

pacchetto: -

Azione2.220

650 V

20A

1.55 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

400 µA @ 600 V

730pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220ACFP

175°C