Pagina 1678 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS21J/ZLX	Nexperia USA Inc.	DIODE SWITCHING SOD323F Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione6.960	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6629U	Microsemi Corporation	DIODE GEN PURP 800V 1.4A E-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, E	Azione6.352	800V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 800V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
R9G20211CSOO	Powerex Inc.	DIODE FAST REC R9G 1100A 200V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione4.400	-	-	-	-	-	-	-	-	-	-	-
MBRH20035R	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	pacchetto: D-67	Azione3.328	35V	200A	650mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis Mount	D-67	D-67	-
VS-60EPS16PBF	Vishay Semiconductor Diodes Division	DIODE INPUT 60A 1600V TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-247-2	Azione5.616	1600V	60A	1V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
VS-20ETS12STRRPBF	Vishay Semiconductor Diodes Division	DIODE INPUT 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione5.488	1200V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
FESB16DT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione2.832	200V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
NS8ATHE3_A/P	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2	Azione5.184	50V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
AS4PMHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCH 1KV 2.4A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-277, 3-PowerDFN	Azione3.120	1000V	2.4A	1.1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	1.8µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SF33G A0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione3.184	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SD103B-TAP	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V SGL DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 125°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione4.016	30V	200mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 20V	50pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
TSSA3U60 R3G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 3A, 60V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione3.232	60V	3A	540mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	500µA @ 60V	450pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS1FL4HM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO-219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 115pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione5.936	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	115pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SS10P4-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 40V Capacitance @ Vr, F: 750pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione519.600	40V	10A	560mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 40V	750pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
US2JDF-13	Diodes Incorporated	DIODE ULTRA FAST 600V 2A DFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: D-Flat Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: 2-SMD, Flat Lead	Azione4.544	600V	2A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	D-Flat	-55°C ~ 150°C
1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: A, Axial	Azione19.440	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
NTE6035	NTE Electronics, Inc	DIODE GEN PURP 320V 60A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 320 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 320 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	320 V	60A	1.4 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 320 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 175°C
MUR420GP-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	200 V	4A	1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
WNSC2D401200W6Q	WeEn Semiconductors	WNSC2D401200W/TO247-2L/STANDARD Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 2068pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	1200 V	40A	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2068pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
VS-80EBU02HN4	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 80A POWERTAB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: PowerTab® Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	200 V	80A	1.1 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	50 µA @ 200 V	-	Through Hole	PowerTab®	PowerTab®	-55°C ~ 175°C
SBA340AL_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 3A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione30.339	40 V	3A	480 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 40 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
CMR1U-02-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Azione26.364	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
CMSH2-20M-TR13-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 20V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Azione8.988	20 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	150pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
1N5819W	SMC Diode Solutions	DIODE SCHOTTKY 40V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione19.281	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	110pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
AS3BGHM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 400V 3A DO214AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	400 V	3A	1.05 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
FFM107-N-H	Formosa Microsemi Co., Ltd.	DIODE GEN PURP 1KV 1A SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	4pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
SK54BH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	40 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
DD1400	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 14000 V Current - Average Rectified (Io): 20mA Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 14 kV Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	14000 V	20mA	40 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	150 ns	5 µA @ 14 kV	-	Through Hole	Axial	Axial	-50°C ~ 150°C

BAS21J/ZLX

Nexperia USA Inc.

DIODE SWITCHING SOD323F

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione6.960

-

JANTX1N6629U

Microsemi Corporation

DIODE GEN PURP 800V 1.4A E-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, E

Azione6.352

800V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

2µA @ 800V

-

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

R9G20211CSOO

Powerex Inc.

DIODE FAST REC R9G 1100A 200V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione4.400

-

MBRH20035R

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

pacchetto: D-67

Azione3.328

35V

200A

650mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis Mount

D-67

-

VS-60EPS16PBF

Vishay Semiconductor Diodes Division

DIODE INPUT 60A 1600V TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-247-2

Azione5.616

1600V

60A

1V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 1600V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

VS-20ETS12STRRPBF

Vishay Semiconductor Diodes Division

DIODE INPUT 20A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione5.488

1200V

20A

1.1V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

FESB16DT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione2.832

200V

16A

975mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

175pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

NS8ATHE3_A/P

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

Azione5.184

50V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

55pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

AS4PMHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 2.4A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

Azione3.120

1000V

2.4A

1.1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

1.8µs

10µA @ 1000V

60pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SF33G A0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione3.184

150V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 150V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SD103B-TAP

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V SGL DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 20V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 125°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione4.016

30V

200mA

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 20V

50pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

125°C (Max)

TSSA3U60 R3G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 3A, 60V

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione3.232

60V

3A

540mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

500µA @ 60V

450pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS1FL4HM3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO-219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione5.936

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

115pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

SS10P4-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 40V
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione519.600

40V

10A

560mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 40V

750pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

US2JDF-13

Diodes Incorporated

DIODE ULTRA FAST 600V 2A DFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: 2-SMD, Flat Lead

Azione4.544

600V

2A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

10pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

D-Flat

-55°C ~ 150°C

1N5620

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: A, Axial

Azione19.440

800V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

NTE6035

NTE Electronics, Inc

DIODE GEN PURP 320V 60A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 320 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 320 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

320 V

60A

1.4 V @ 60 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 320 V

-

Stud Mount

DO-203AA, DO-5, Stud

DO-5

-65°C ~ 175°C

MUR420GP-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

200 V

4A

1 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

10 µA @ 200 V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

WNSC2D401200W6Q

WeEn Semiconductors

WNSC2D401200W/TO247-2L/STANDARD

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: 2068pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

1200 V

40A

1.6 V @ 40 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

2068pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

VS-80EBU02HN4

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 80A POWERTAB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: PowerTab®
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

200 V

80A

1.1 V @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

50 µA @ 200 V

-

Through Hole

PowerTab®

-55°C ~ 175°C

SBA340AL_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 3A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione30.339

40 V

3A

480 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 40 V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

CMR1U-02-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 200V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Azione26.364

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

CMSH2-20M-TR13-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 20V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Azione8.988

20 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

150pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

1N5819W

SMC Diode Solutions

DIODE SCHOTTKY 40V 1A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione19.281

40 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

110pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

AS3BGHM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 400V 3A DO214AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

400 V

3A

1.05 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

FFM107-N-H

Formosa Microsemi Co., Ltd.

DIODE GEN PURP 1KV 1A SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

4pF @ 4V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 150°C

SK54BH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 5A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

40 V

5A

550 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

DD1400

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 14000 V
Current - Average Rectified (Io): 20mA
Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 14 kV
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

14000 V

20mA

40 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

150 ns

5 µA @ 14 kV

-

Through Hole

Axial

-50°C ~ 150°C