Pagina 1665 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.665/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N4305
Fairchild/ON Semiconductor

DIODE GEN PURP 75V 300MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 10mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-204AH, DO-35, Axial
Azione5.424
75V
300mA
850mV @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
B0520WS-7
Diodes Incorporated

DIODE SCHOTTKY 20V 500MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 20V
  • Capacitance @ Vr, F: 58pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SC-76, SOD-323
Azione5.040
20V
500mA
430mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 20V
58pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
hot 6TQ045S
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione14.520
45V
6A
600mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
1N3174
Powerex Inc.

DIODE STUD MNT 240A 1000V DO-9

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione7.616
-
-
-
-
-
-
-
-
-
-
-
HSM350J/TR13
Microsemi Corporation

DIODE SCHOTTKY 50V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AB, SMC
Azione4.864
50V
3A
620mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
SK20H45 A0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: 200°C (Max)
pacchetto: R6, Axial
Azione2.000
45V
20A
550mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 45V
-
Through Hole
R6, Axial
R-6
200°C (Max)
RS1AHM2G
TSC America Inc.

DIODE, FAST, 1A, 50V, 150NS, AEC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.952
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BA158G R0G
TSC America Inc.

DIODE, FAST, 1A, 600V, 150NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione6.320
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
BAS16WS-G3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SC-76, SOD-323
Azione4.416
75V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
FDLL3595
Fairchild/ON Semiconductor

DIODE GEN PURP 125V 200MA LL34

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 1nA @ 125V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: DO-213AC, MINI-MELF, SOD-80
Azione49.614
125V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
3µs
1nA @ 125V
8pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80
-65°C ~ 200°C
VS-E5PH7506LHN3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 75A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 75 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 57 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
75A
1.7 V @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
57 ns
25 µA @ 600 V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
VS-45APS12L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 45A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
1200 V
45A
1.14 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
-
Through Hole
TO-247-3
TO-247AD
-40°C ~ 150°C
SS515F-HF
Comchip Technology

DIODE SCHOTTKY 150V 5A SMAF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 150 V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
150 V
5A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 150 V
300pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMAF
-55°C ~ 150°C
FR305GP-AP
Micro Commercial Co

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
MUR190A
Taiwan Semiconductor Corporation

DIODE GEN PURP 900V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 900 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
900 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 900 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR34LF_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 3A SMBF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 235pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
40 V
3A
460 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
235pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
S15AYD2
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Request a Quote
50 V
15A
1.3 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 50 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-50°C ~ 150°C
SS510B
MDD

DIODE SCHOTTKY 100V 5A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 100 V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Request a Quote
100 V
5A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 100 V
300pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-50°C ~ 150°C
SR803-BP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
30 V
8A
650 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
500pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
S15GLWH
Taiwan Semiconductor Corporation

1.5A, 400V, STANDARD RECOVERY RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione60.000
400 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 175°C
PU2JB
Taiwan Semiconductor Corporation

25NS, 2A, 600V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 600 V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione18.000
600 V
2A
1.5 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 600 V
22pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
11DQ10
SMC Diode Solutions

DIODE SCHOTTKY 100V 1.1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.1A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: 35pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione7.821
100 V
1.1A
960 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
35pF @ 5V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-40°C ~ 150°C
SD060SE45B-T1
SMC Diode Solutions

DIODE SCHOTTKY 45V 3A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Capacitance @ Vr, F: 180pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
45 V
3A
510 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 45 V
180pF @ 5V, 1MHz
Surface Mount
Die
Die
-55°C ~ 125°C
M1494NC250
IXYS

DIODE GEN PURP 2.5KV 1494A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1494A
  • Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.9 µs
  • Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
2500 V
1494A
2.34 V @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
3.9 µs
85 mA @ 2500 V
-
Clamp On
DO-200AC, K-PUK
W5
-40°C ~ 125°C
SS23B
NextGen Components

DIODE SCHOTTKY 30V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 220pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -50°C ~ 125°C
pacchetto: -
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30 V
2A
-
-
-
-
220pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-50°C ~ 125°C
CTLSH3-30M833S-TR
Central Semiconductor Corp

DIODE SCHOTTKY 30V 3A TLM833S

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: TLM833S
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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30 V
3A
450 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 30 V
-
Surface Mount
8-PowerVDFN
TLM833S
-65°C ~ 150°C
HRW0202A-JTR-E
Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
STPS3H100UFN
STMicroelectronics

DIODE SCHOTTKY 100V 3A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 760 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
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100 V
3A
760 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 mA @ 100 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat
-40°C ~ 175°C