Pagina 166 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  166/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GI824-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: P600, Axial
Azione3.136
400V
5A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
10µA @ 400V
300pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
hot MRA4003T3
ON Semiconductor

DIODE GEN PURP 300V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione628.284
300V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 300V
-
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 175°C
S2HVM7.5
Semtech Corporation

DIODE GEN PURP 7.5KV 2A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 7500V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 8.8V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 1mA @ 7500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: Module
Azione4.944
7500V
2A
8.8V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
2.5µs
1mA @ 7500V
-
Chassis, Stud Mount
Module
-
-55°C ~ 150°C
VS-VSKE91/10
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 100A ADDAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (3)
  • Supplier Device Package: ADD-A-PAK?
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: ADD-A-PAK (3)
Azione7.056
1000V
100A
-
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 1000V
-
Chassis Mount
ADD-A-PAK (3)
ADD-A-PAK?
-40°C ~ 150°C
hot BYG20G-M3/TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione21.600
400V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS115LHRHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione4.496
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
UF27520070A1.T
SMC Diode Solutions

DIODE AVALANCHE 200V 90A DIE

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 90A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 60µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: Die
Azione6.192
200V
90A
1V @ 90A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
60µA @ 200V
-
Surface Mount
Die
Die
150°C (Max)
VS-ETH1506FP-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 29ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-220-2 Full Pack
Azione19.104
600V
15A
2.45V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
29ns
15µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-65°C ~ 175°C
STPSC2H12D
STMicroelectronics

DIODE SCHOTTKY 1.2KV 2A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 12µA @ 1200V
  • Capacitance @ Vr, F: 190pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
Azione34.572
1200V
2A
1.5V @ 2A
No Recovery Time > 500mA (Io)
0ns
12µA @ 1200V
190pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot DSEI30-12A
IXYS

DIODE GEN PURP 1.2KV 26A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 26A
  • Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-2
Azione19.800
1200V
26A
2.55V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
B380-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 80 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
80 V
3A
790 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 80 V
100pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 125°C
NTE5889
NTE Electronics, Inc

DIODE GEN PURP 1.2KV 30A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
30A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 1200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-40°C ~ 175°C
UT4005
Microchip Technology

DIODE GEN PURP 50V 4A B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: B
  • Operating Temperature - Junction: -195°C ~ 175°C
pacchetto: -
Request a Quote
50 V
4A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 50 V
-
Through Hole
Axial
B
-195°C ~ 175°C
CTLSH5-40M833S-TR
Central Semiconductor Corp

DIODE SCHOTTKY 40V 5A TLM833S

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 220pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: TLM833S
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
40 V
5A
520 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
200 µA @ 40 V
220pF @ 4V, 1MHz
Surface Mount
8-PowerVDFN
TLM833S
-65°C ~ 150°C
S3210
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SS24T3
onsemi

DIODE SCHOTTKY POWER 2A 40V SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
40 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 40 V
-
Surface Mount
DO-214AA, SMB
SMB
-
FR107-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1000 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
PCDP2065GC_T0_00601
Panjit International Inc.

650V SIC SCHOTTKY BARRIER DIODE

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 529pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione6.000
650 V
20A
1.8 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 650 V
529pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
HSM2836C-JTL-E
Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTX1N6623U-TR
Microchip Technology

DIODE GP 800V 1.5A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
800 V
1.5A
1.8 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
500 nA @ 800 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 175°C
SE12DLJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.7A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3.7A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 96pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
3.7A
1 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
5 µA @ 600 V
96pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AC (SMPD)
-55°C ~ 175°C
1N1202B
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
Request a Quote
200 V
12A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
RB088RSM15STL1
Rohm Semiconductor

150V 10A, TO-277GE, ULTRA LOW IR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione11.925
150 V
10A
880 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5 µA @ 150 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
175°C
MSASC100H45H
Microchip Technology

DIODE SCHOTTKY 45V 100A THINKEY1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™1
  • Supplier Device Package: ThinKey™1
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
45 V
100A
650 mV @ 80 A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
-
Surface Mount
ThinKey™1
ThinKey™1
-65°C ~ 150°C
TRS12E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 12A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 65pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Azione9
650 V
12A
1.7 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
65pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
PCDD10120G1_L2_00001
Panjit International Inc.

DIODE SIL CARB 1.2KV 10A TO252AA

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 529pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione17.970
1200 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 1200 V
529pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSEP6-06AS-TUB
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 5pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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600 V
6A
2.03 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
50 µA @ 600 V
5pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
JANTXV1N3174R
Microchip Technology

DIODE GEN PURP 300A DO205AB DO9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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-
300A
1.55 V @ 940 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 1000 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C