Pagina 1654 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.654/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MA271110GL
Panasonic Electronic Components

DIODE GEN 80V 100MA SSSMINI2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SSSMini2-F3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: 2-SMD, Flat Lead
Azione6.056.040
80V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
3ns
100nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
SSSMini2-F3
150°C (Max)
hot 15MQ040NTR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione89.796
40V
3A
490mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
SMA
-40°C ~ 150°C
hot SBL845
Diodes Incorporated

DIODE SCHOTTKY 45V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-220-2
Azione7.344
45V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
1N3167
Powerex Inc.

DIODE STUD MNT 240A 350V DO-9

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione4.144
-
-
-
-
-
-
-
-
-
-
-
VS-300UR10A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: DO-205AB, DO-9, Stud
Azione6.384
100V
300A
1.4V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 100V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 200°C
UPS540/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 5A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-216AA
Azione5.248
40V
5A
540mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
250pF @ 4V, 1MHz
Surface Mount
DO-216AA
Powermite
-55°C ~ 125°C
SB530-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione2.544
30V
5A
480mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
AR1PD-M3/85A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1A DO220AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione7.216
200V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 200V
12.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
HER108G B0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.424
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SB110-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-204AL, DO-41, Axial
Azione4.080
10V
1A
480mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 10V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N4937GHR0G
TSC America Inc.

DIODE, FAST, 1A, 600V, 200NS, AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.248
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
LL4148-M-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 8ns
  • Current - Reverse Leakage @ Vr: 25nA @ 20V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80 MiniMELF
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-213AC, MINI-MELF, SOD-80
Azione4.576
100V
300mA
1V @ 50mA
Fast Recovery =< 500ns, > 200mA (Io)
8ns
25nA @ 20V
4pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
175°C (Max)
hot 1SR154-600TE25
Rohm Semiconductor

DIODE GEN PURP 600V 1A PMDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DO-214AC, SMA
Azione379.200
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
hot STTH802B-TR
STMicroelectronics

DIODE GEN PURP 200V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 6µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione18.300
200V
8A
1.05V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
6µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
175°C (Max)
RB510VM-30FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 nA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione14.343
30 V
100mA
460 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
300 nA @ 10 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
SS24SHE3J_B-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
40 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
130pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2K-HF
Comchip Technology

DIODE GEN PURP 800V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
800 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
22pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
1N5417E3
Microchip Technology

DIODE GEN PURP 200V 3A B AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
200 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
-
-
Through Hole
B, Axial
B, Axial
-65°C ~ 175°C
SMS290
Diotec Semiconductor

DIODE SCHOTT 90V 2A MELF DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF DO-213AB (Plastic)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Azione14.850
90 V
2A
790 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 90 V
-
Surface Mount
DO-213AB, MELF
MELF DO-213AB (Plastic)
-50°C ~ 150°C
SBA0820CS_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 800MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione14.205
20 V
800mA
550 mV @ 800 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 20 V
-
Surface Mount
SC-90, SOD-323F
SOD-323
-55°C ~ 150°C
CS3G-E3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.8 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 26pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
400 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
2.8 µs
10 µA @ 400 V
26pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR460S-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 4A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
4A
1.25 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
FX2000G
Diotec Semiconductor

DIODE FAST D8X7.5_LOWRTH 400V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Azione2.871
400 V
20A
940 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 400 V
-
Through Hole
P600, Axial
P600
-50°C ~ 150°C
SK20H45
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 20A R-6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: 200°C (Max)
pacchetto: -
Request a Quote
45 V
20A
550 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 45 V
-
Through Hole
R-6, Axial
R-6
200°C (Max)
SF1JDF-13
Diodes Incorporated

DIODE GEN PURP 600V 1A DFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: D-Flat
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
20pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
D-Flat
-55°C ~ 150°C
SK2C0A
Surge

DIODE SCHOTTKY 200V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 200 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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200 V
2A
850 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 200 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CMR3-06-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 600V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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600 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
SF53-AP
Micro Commercial Co

DIODE GEN PURP 150V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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150 V
5A
950 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 150 V
45pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C