Pagina 1609 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.609/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N4003 TR
Central Semiconductor Corp

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.312
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
SRP100K-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -50°C ~ 125°C
pacchetto: DO-204AL, DO-41, Axial
Azione4.128
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
10µA @ 800V
12pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 125°C
hot STTA306B-TR
STMicroelectronics

DIODE GEN PURP 600V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione24.000
600V
3A
1.85V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
125°C (Max)
PS410825
Powerex Inc.

DIODE MODULE 800V 2500A POWRBLOK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2500A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22µs
  • Current - Reverse Leakage @ Vr: 200mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK? Module
  • Supplier Device Package: POW-R-BLOK? Module
  • Operating Temperature - Junction: -
pacchetto: POW-R-BLOK? Module
Azione2.144
800V
2500A
1V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
22µs
200mA @ 800V
-
Chassis Mount
POW-R-BLOK? Module
POW-R-BLOK? Module
-
S3HVM10
Semtech Corporation

DIODE GEN PURP 10KV 1.2A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 10000V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 11.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 10000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: Module
Azione4.064
10000V
1.2A
11.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
2.5µs
1µA @ 10000V
-
Chassis, Stud Mount
Module
-
-55°C ~ 150°C
A197M
Powerex Inc.

DIODE GEN PURP 600V 250A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-205AB, DO-9, Stud
Azione2.736
600V
250A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
-
-40°C ~ 150°C
JANTX1N4245
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: A, Axial
Azione7.840
200V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 200V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
HSM5100JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AB, SMC
Azione6.352
100V
5A
800mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
VBT3045BP-M3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 45V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.088
45V
30A (DC)
700mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
VIT760-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 7.5A 60V TO-262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione5.536
60V
7.5A
800mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-55°C ~ 150°C
VS-30BQ015HM3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 350mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 15V
  • Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AB, SMC
Azione7.680
15V
3A
350mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 15V
1120pF @ 5V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
RS07G-M-08
Vishay Semiconductor Diodes Division

DIODE SW 400V DO219-M

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione4.016
400V
500mA
1.15V @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
UF4005TA
SMC Diode Solutions

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.296
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
hot PD3S0230-7
Diodes Incorporated

DIODE SCHOTTKY 30V POWERDI323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10.7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 323
  • Supplier Device Package: PowerDI? 323
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: PowerDI? 323
Azione636.348
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10.7pF @ 1V, 1MHz
Surface Mount
PowerDI? 323
PowerDI? 323
-65°C ~ 125°C
CDBA260-HF
Comchip Technology

DIODE SCHOTTKY 60V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione49.314
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
S1MWFM-7
Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione6.708
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
5 µA @ 1000 V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
W1411LC320
IXYS

DIODE GEN PURP 3.2KV 1411A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3200 V
  • Current - Average Rectified (Io): 1411A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 3200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
pacchetto: -
Request a Quote
3200 V
1411A
2 V @ 2870 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 3200 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
S5MB_R1_00601
Panjit International Inc.

SURFACE GENERAL PURPOSE RECTIFIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione9.600
1000 V
5A
1.15 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1 kV
35pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
B5819WSL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323FL
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: -
Request a Quote
40 V
1A
600 mV @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 40 V
120pF @ 4V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323FL
-65°C ~ 125°C
JANTXV1N3595US-TR
Microchip Technology

DIODE GEN PURP 125V 4A B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
125 V
4A
1 V @ 200 mA
Standard Recovery >500ns, > 200mA (Io)
3 µs
-
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 150°C
V12P6HM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 12A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione17.580
60 V
12A
610 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.9 mA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
ESW6006
Diotec Semiconductor

Diode, Superfast, TO-247-2L, 600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -50°C ~ 175°C
pacchetto: -
Azione1.350
600 V
60A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
50 µA @ 600 V
-
Through Hole
TO-247-2
TO-247
-50°C ~ 175°C
US3GB-HF
Comchip Technology

DIODE GP 400V 3A SMB/DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
400 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 400 V
-
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C
SDS120J002C3-ISATH
Luminus Devices Inc.

DIODE 1200V-2A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 8 µA @ 1.2 kV
  • Capacitance @ Vr, F: 165pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
11A
1.5 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
8 µA @ 1.2 kV
165pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
BAT54T-7-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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30 V
200mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 10V, 1MHz
Surface Mount
SOT-523
SOT-523
-65°C ~ 150°C
SK15BH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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50 V
1A
750 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
BAS21QAZ
Nexperia USA Inc.

DIODE GP 250V 330MA DFN1010D-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250 V
  • Current - Average Rectified (Io): 330mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione43.596
250 V
330mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 200 V
2pF @ 0V, 1MHz
Surface Mount
3-XDFN Exposed Pad
DFN1010D-3
150°C (Max)
PSDB0860L1_T0_00001
Panjit International Inc.

DIODE GEN PURP 600V 8A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione5.964
600 V
8A
1.8 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
100 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
-55°C ~ 150°C