Pagina 134 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  134/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MBR1645
Fairchild/ON Semiconductor

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-220-2
Azione21.144
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
5821SMJ/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione6.384
30V
3A
480mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
HERA802G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 8A, 100V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2
Azione4.496
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
65pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SBRT20M60SP5-13
Diodes Incorporated

DIODE SBR 60V 20A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 180µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: PowerDI? 5
Azione2.240
60V
20A
570mV @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
180µA @ 60V
-
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 150°C
B120-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.096
20V
1A
520mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
S1BLHRVG
TSC America Inc.

DIODE, 1A, 100V, AEC-Q101, SUB S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-219AB
Azione6.608
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
SDT20120VCT
Diodes Incorporated

SCHOTTKY RECTIFIER TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-3
Azione3.616
120V
10A
860mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 120V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
hot FML-G16S
Sanken

DIODE GEN PURP 600V 5A TO220F-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione36.540
600V
5A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
MA3J142KGL
Panasonic Electronic Components

DIODE GEN PURP 80V 100MA SMINI3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-85
Azione6.752
80V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
3ns
100nA @ 75V
-
Surface Mount
SC-85
SMini3-F2
150°C (Max)
CDBB3200-HF
Comchip Technology

DIODE SCHOTTKY 200V 3A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 200V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 175°C
pacchetto: DO-214AA, SMB
Azione27.678
200V
3A (DC)
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 200V
250pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 175°C
BYV98-200-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 4A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: SOD-64, Axial
Azione59.076
200V
4A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
MBR1020LL_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 1A SOD123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 mA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione13.158
20 V
1A
450 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
25 mA @ 20 V
-
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 125°C
1N5401GH-A0G
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
100 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 100 V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
JAN1N5812R
Microchip Technology

DIODE GEN PURP 50V 20A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 300pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
50 V
20A
950 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 50 V
300pF @ 10V, 1MHz
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
CMR1U-04-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
400 V
1A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 400 V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
S30640
Microchip Technology

DIODE GEN PURP 400V 85A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
400 V
85A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 175°C
RHRU50100
Harris Corporation

DIODE AVALANCHE 1KV 50A TO218

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-218-1
  • Supplier Device Package: TO-218
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
1000 V
50A
3 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
95 ns
500 µA @ 1000 V
-
Chassis Mount
TO-218-1
TO-218
-65°C ~ 175°C
VS-65APS08L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 65A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 65A
  • Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 65 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
800 V
65A
1.12 V @ 65 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 800 V
-
Through Hole
TO-247-3
TO-247AD
-40°C ~ 150°C
1N6940UTK3-TR
Microchip Technology

DIODE SCHOTTKY 15V 150A THINKEY3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 15 V
  • Capacitance @ Vr, F: 10000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
15 V
150A
500 mV @ 150 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 15 V
10000pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 150°C
NA03HA20-TE12L
KYOCERA AVX

DIODE SCHOTTKY 200V 3A NA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: NA (DO-221BC)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione17.985
200 V
3A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 200 V
-
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
NA (DO-221BC)
-40°C ~ 150°C
SF25G-TP
Micro Commercial Co

DIODE GEN PURP 300V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
300 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
30pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
GS2JHE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1000 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 µA @ 1000 V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
6A10G-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1000 V
6A
1 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
100pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
SS23M
Taiwan Semiconductor Corporation

2A, 30V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 30 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
30 V
2A
600 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 30 V
35pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
V15PM10HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
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100 V
15A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
SB2060
SMC Diode Solutions

DIODE SCHOTTKY 60V 20A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
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Azione8.739
60 V
20A
700 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 60 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
CMMR1U-08-TR-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 800V 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -65°C ~ 150°C
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Azione16.992
800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
1 µA @ 800 V
9pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-65°C ~ 150°C
SVT10120VB_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 120V 10A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
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Azione14.910
120 V
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 120 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C