Pagina 1210 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLH02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: L-FLAT?	Azione3.696	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
GP02-40HM3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 4KV 250MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 4000V Capacitance @ Vr, F: 3pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione7.952	4000V	250mA	3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 4000V	3pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
VS-30CPF02PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-247-3	Azione3.056	200V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
V8P10-E3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 680mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione90.000	100V	8A	680mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	70µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
VS-31DQ04TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3.3A C16 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3.3A Voltage - Forward (Vf) (Max) @ If: 570mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: C-16, Axial Supplier Device Package: C-16 Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: C-16, Axial	Azione3.264	40V	3.3A	570mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Through Hole	C-16, Axial	C-16	-40°C ~ 150°C
SF2002G C0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3	Azione6.448	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
MBR1050HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2	Azione7.808	50V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
6A60GHR0G	TSC America Inc.	DIODE, 6A, 600V, AEC-Q101, R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: R6, Axial	Azione3.344	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
RS2AHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione5.344	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RM 1Z	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: Axial	Azione2.656	200V	1A	950mV @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
NTS260SFT3G	ON Semiconductor	DIODE SCHOTTKY 60V 2A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SOD-123F	Azione7.856	60V	2A	650mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 60V	-	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
SS15HM2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione5.808	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
IMBD4448-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 70V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione6.176	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 70V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
RB055LAM-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	pacchetto: SOD-128	Azione7.456	40V	3A	620mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
DSA75-16B	IXYS	DIODE AVALANCHE 1.6KV 110A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	pacchetto: DO-203AB, DO-5, Stud	Azione7.136	1600V	110A	1.17V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	6mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 180°C
MR854G	ON Semiconductor	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: DO-201AA, DO-27, Axial	Azione42.342	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 400V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
JANTXV1N4500	Microchip Technology	DIODE GEN PURP 75V DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 100 nA @ 80 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	75 V	-	1.1 V @ 300 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	100 nA @ 80 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
RB520S-30GTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SR5010H-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 175°C	pacchetto: -	Request a Quote	100 V	5A	800 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 100 V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 175°C
MBR845D_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 45V 8A TO263 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	45 V	8A	700 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263	-65°C ~ 175°C
S2013-0120	Microchip Technology	TEMPERATURE COMPENSATED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB168LAM-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	pacchetto: -	Azione7.245	40 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
BAS316_R1_00001	Panjit International Inc.	DIODE GEN PURP 100V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 100 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione114.228	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 100 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
ES2CH	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CGRB305-HF	Comchip Technology	DIODE GEN PURP 600V 3A DO214AA S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	600 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
FDLL4148_NBD3001	onsemi	DIODE GEN PURP 100V 200MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	100 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	-55°C ~ 175°C
CDBQC0230R-HF	Comchip Technology	DIODE SCHOTTKY 30V 100MA 0402C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 0402C/SOD-923F Operating Temperature - Junction: 125°C	pacchetto: -	Request a Quote	30 V	100mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 10 V	-	Surface Mount	0402 (1006 Metric)	0402C/SOD-923F	125°C
S5GB-HF	Comchip Technology	DIODE GP 400V 5A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	400 V	5A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C

CLH02(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 3A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: L-FLAT?

Azione3.696

300V

3A (DC)

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

-

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 150°C

GP02-40HM3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4KV 250MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione7.952

4000V

250mA

3V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 4000V

3pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

VS-30CPF02PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-247-3

Azione3.056

200V

30A

1.41V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 200V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

V8P10-E3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione90.000

100V

8A

680mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

70µA @ 100V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

VS-31DQ04TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3.3A C16

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3.3A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: C-16, Axial
Supplier Device Package: C-16
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: C-16, Axial

Azione3.264

40V

3.3A

570mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Through Hole

C-16, Axial

C-16

-40°C ~ 150°C

SF2002G C0G

TSC America Inc.

DIODE, SUPER FAST, 20A, 100V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3

Azione6.448

100V

20A

975mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

80pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

MBR1050HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

Azione7.808

50V

10A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

6A60GHR0G

TSC America Inc.

DIODE, 6A, 600V, AEC-Q101, R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: R6, Axial

Azione3.344

600V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

60pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-55°C ~ 150°C

RS2AHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione5.344

50V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RM 1Z

Sanken

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: Axial

Azione2.656

200V

1A

950mV @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

-

Through Hole

Axial

-40°C ~ 150°C

NTS260SFT3G

ON Semiconductor

DIODE SCHOTTKY 60V 2A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SOD-123F

Azione7.856

60V

2A

650mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 60V

-

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

SS15HM2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione5.808

50V

1A

750mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

IMBD4448-HE3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione6.176

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 70V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

RB055LAM-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

pacchetto: SOD-128

Azione7.456

40V

3A

620mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

DSA75-16B

IXYS

DIODE AVALANCHE 1.6KV 110A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-203AB, DO-5, Stud

Azione7.136

1600V

110A

1.17V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

6mA @ 1600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 180°C

MR854G

ON Semiconductor

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: DO-201AA, DO-27, Axial

Azione42.342

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 400V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

JANTXV1N4500

Microchip Technology

DIODE GEN PURP 75V DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

75 V

-

1.1 V @ 300 mA

Small Signal =< 200mA (Io), Any Speed

6 ns

100 nA @ 80 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

RB520S-30GTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

SR5010H-BP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 175°C

pacchetto: -

Request a Quote

100 V

5A

800 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 100 V

200pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 175°C

MBR845D_R2_00001

Panjit International Inc.

DIODE SCHOTTKY 45V 8A TO263

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

45 V

8A

700 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 45 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263

-65°C ~ 175°C

S2013-0120

Microchip Technology

TEMPERATURE COMPENSATED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

RB168LAM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

pacchetto: -

Azione7.245

40 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

BAS316_R1_00001

Panjit International Inc.

DIODE GEN PURP 100V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione114.228

100 V

250mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 100 V

1.5pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 150°C

ES2CH

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

150 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 150 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CGRB305-HF

Comchip Technology

DIODE GEN PURP 600V 3A DO214AA S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

600 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

FDLL4148_NBD3001

onsemi

DIODE GEN PURP 100V 200MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

100 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80

-55°C ~ 175°C

CDBQC0230R-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0402C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 0402C/SOD-923F
Operating Temperature - Junction: 125°C

pacchetto: -

Request a Quote

30 V

100mA

450 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 10 V

-

Surface Mount

0402 (1006 Metric)

0402C/SOD-923F

125°C

S5GB-HF

Comchip Technology

DIODE GP 400V 5A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

400 V

5A

1.1 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C