Pagina 116 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 809
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  116/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IRD3CH53DB6
Infineon Technologies

DIODE GEN PURP 1.2KV 100A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 270ns
  • Current - Reverse Leakage @ Vr: 2µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Die
Azione5.472
1200V
100A
2.7V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
270ns
2µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
hot JANTX1N5816
Microsemi Corporation

DIODE GEN PURP 150V 20A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 300pF @ 10V, 1MHz
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-203AA, DO-4, Stud
Azione5.200
150V
20A
950mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
300pF @ 10V, 1MHz
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
MMBD1501A_D87Z
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10nA @ 180V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.776
200V
200mA
1.1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
10nA @ 180V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C (Max)
hot SMBYT03-400
STMicroelectronics

DIODE GEN PURP 400V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione446.928
400V
3A
1.5V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
SMC
-40°C ~ 150°C
hot 30EPF10
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 30A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 450ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-2
Azione4.624
1000V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
450ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
VS-85HFL10S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 85A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: DO-203AB, DO-5, Stud
Azione7.056
100V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
500ns
100µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
DPG60I400HA
IXYS

DIODE GEN PURP 400V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione7.664
400V
60A
1.47V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
1µA @ 400V
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
VS-15TQ060STRL-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 15A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 60V
  • Capacitance @ Vr, F: 720pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.816
60V
15A
620mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 60V
720pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
VS-10ETS10S-M3
Vishay Semiconductor Diodes Division

DIODE RECT 1000V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.040
1000V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
SF801G C0G
TSC America Inc.

DIODE, SUPER FAST, 8A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-3
Azione5.888
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SJPJ-L3
Sanken

DIODE SCHOTTKY 30V 3A SJP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: SJP
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: 2-SMD, J-Lead
Azione6.768
30V
3A
450mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 30V
-
Surface Mount
2-SMD, J-Lead
SJP
-40°C ~ 150°C
V3PAL45-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 45V DO-221BC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione5.168
45V
3A
540mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
450µA @ 45V
-
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-40°C ~ 150°C
hot BYG20D-E3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione714.000
200V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SE15PDHM3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 900ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione4.368
200V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 200V
9.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
SE15FJ-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 900ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-219AB
Azione6.656
600V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 600V
10.5pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
UF4003 R0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione2.240
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
PSDH30120S1_T0_00001
Panjit International Inc.

DIODE GP 1.2KV 30A TO247AD-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione4.158
1200 V
30A
3.5 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
250 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247AD-2
-55°C ~ 150°C
V8PAM103SHM3-I
Vishay

8A, 100V, SMPA TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 140 µA @ 100 V
  • Capacitance @ Vr, F: 770pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
100 V
2.8A
800 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
140 µA @ 100 V
770pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-40°C ~ 175°C
US1K-HF
Comchip Technology

DIODE GEN PURP 800V 30A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
800 V
30A
1.65 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CMR1-10-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 1KV 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -60°C ~ 175°C
pacchetto: -
Azione6.573
1000 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
Surface Mount
DO-214AA, SMB
SMB
-60°C ~ 175°C
CDBAT120-HF
Comchip Technology

DIODE SCHOTTKY DO-214AC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TST30L100CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 15A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione2.649
100 V
15A
820 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 100 V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
CD214C-B320R
Bourns Inc.

DIODE SCHOTTKY 20V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
20 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
250pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
V15PM45-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700 µA @ 45 V
  • Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Azione12.411
45 V
15A
600 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
700 µA @ 45 V
3000pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
RBQ3RSM10BTFTL1
Rohm Semiconductor

100V, 3A, TO-277GE, LOW IR SBD F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
pacchetto: -
Request a Quote
100 V
3A
700 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
BAS20-QR
Nexperia USA Inc.

BAS20-Q/SOT23/TO-236AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
  • Operating Temperature - Junction: 150°C
pacchetto: -
Request a Quote
200 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
100 µA @ 150 V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
150°C
SMBT1248LT3
onsemi

SS SOT23 GP XSTR SPCL TR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
FR505-TP
Micro Commercial Co

DIODE GEN PURP 600V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
5A
1.35 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C