Pagina 1135 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.135/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MBR0520LT3
ON Semiconductor

DIODE SCHOTTKY 20V 500MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 385mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: SOD-123
Azione164.400
20V
500mA
385mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 20V
-
Surface Mount
SOD-123
SOD-123
-65°C ~ 125°C
1N1343B
Microsemi Corporation

DIODE RECT 150V 16A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: DO-203AA, DO-4, Stud
Azione4.592
150V
16A
1.3V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 150V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 200°C
VSB1045-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Capacitance @ Vr, F: 1995pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione3.376
45V
7A
560mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
1995pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
SF1004G C0G
TSC America Inc.

DIODE, SUPER FAST, 10A, 200V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-3
Azione5.184
200V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
CMR1-04M BK
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.664
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
SF4005-TAP
Vishay Semiconductor Diodes Division

DIODE AVAL 1A 600V SOD-57

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: SOD-57, Axial
Azione3.008
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
hot BYG10J-E3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione674.400
600V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
4µs
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HS1GL RQG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione5.152
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1AL MQG
TSC America Inc.

DIODE, 1A, 50V, SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-219AB
Azione2.176
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
BAS40T-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 200MA SOT523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOT-523
Azione3.296
40V
200mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
5ns
200nA @ 30V
5pF @ 0V, 1MHz
Surface Mount
SOT-523
SOT-523
-55°C ~ 125°C
hot RURD460S9A
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione16.500
600V
4A
1.5V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
100µA @ 600V
15pF @ 10V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-65°C ~ 175°C
hot SBR8A60P5-13
Diodes Incorporated

DIODE SBR 60V 8A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: PowerDI? 5
Azione564.000
60V
8A
620mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-65°C ~ 175°C
GF1K
Fairchild/ON Semiconductor

DIODE GEN PURP 800V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione7.920
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-65°C ~ 175°C
hot APT30D40BG
Microsemi Corporation

DIODE GEN PURP 400V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 250µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione48.600
400V
30A
1.5V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
250µA @ 400V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
hot SS28
Fairchild/ON Semiconductor

DIODE SCHOTTKY 80V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: DO-214AA, SMB
Azione1.712.004
80V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 80V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 125°C
PMEG6020ELRX
Nexperia USA Inc.

DIODE SCHOTTKY 60V 2A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 760mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300nA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: CFP3
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: SOD-123W
Azione29.790
60V
2A
760mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
300nA @ 60V
-
Surface Mount
SOD-123W
CFP3
175°C (Max)
CDSF355BS-HF
Comchip Technology

DIODE GEN PURP 100V 100MA 1005

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 80 V
  • Capacitance @ Vr, F: 3pF @ 500mV, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005/SOD-323F
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
100 V
100mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
100 nA @ 80 V
3pF @ 500mV, 1MHz
Surface Mount
1005 (2512 Metric)
1005/SOD-323F
-40°C ~ 150°C
BAT54FN2_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 200MA 2DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: 2-DFN (1x0.6)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione20.970
30 V
200mA
600 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
2 µA @ 25 V
-
Surface Mount
0402 (1006 Metric)
2-DFN (1x0.6)
-55°C ~ 125°C
UF1J_R1_00001
Panjit International Inc.

DIODE GEN PURP 600V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione6.600
600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
1 µA @ 600 V
17pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
SS520C
MDD

DIODE SCHOTTKY 200V 5A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 200 V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
200 V
5A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 200 V
400pF @ 4V, 1MHz
Surface Mount
-
-
-
PG5395_R2_00001
Panjit International Inc.

DIODE GEN PURP 400V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
400 V
1.5A
1.4 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
25pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
S2J-AU_R1_000A1
Panjit International Inc.

DIODE GEN PURP 600V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 600 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
1F5G-AP
Micro Commercial Co

DIODE GEN PURP 600V 1A R-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-1, Axial
  • Supplier Device Package: R-1
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
12pF @ 4V, 1MHz
Through Hole
R-1, Axial
R-1
-55°C ~ 150°C
CDS4248
Microchip Technology

UFR,FRR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BR39F_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 90V 3A SMBF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 90 V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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90 V
3A
800 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 90 V
120pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-65°C ~ 150°C
VS-2EAH02-M3-H
Vishay General Semiconductor - Diodes Division

2A, 200V, FRED HYPERFAST RECTIFI

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione11.100
200 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 200 V
-
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-55°C ~ 175°C
UES804
Microchip Technology

DIODE GEN PURP 200V 50A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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200 V
50A
1.25 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 150°C
1N4006GR0
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
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800 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C