Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated |
DIODE SCHOTTKY 60V 7.5A TO220AC
|
pacchetto: TO-220-2 |
Azione168.540 |
|
60V | 7.5A | 750mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 400pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 250V 275A DO205AB
|
pacchetto: DO-205AB, DO-9, Stud |
Azione4.048 |
|
250V | 275A | 1.35V @ 275A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 250V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 190°C |
||
Powerex Inc. |
DIODE GEN PURP 800V 100A DO205AA
|
pacchetto: DO-205AA, DO-8, Stud |
Azione4.656 |
|
800V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 13mA @ 800V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
||
Semtech Corporation |
DIODE GEN PURP 2KV 350MA AXIAL
|
pacchetto: Axial |
Azione5.120 |
|
2000V | 350mA | 5V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 250nA @ 1500V | 2.5pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL
|
pacchetto: B, Axial |
Azione12.276 |
|
200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 20A DO5
|
pacchetto: DO-203AB, DO-5, Stud |
Azione7.328 |
|
100V | 20A | 1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
||
Fairchild/Micross Components |
DIODE GEN PURP 100V 200MA SOD27
|
pacchetto: DO-204AH, DO-35, Axial |
Azione5.352.144 |
|
100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A DO214BA
|
pacchetto: DO-214AA, SMB |
Azione3.472 |
|
600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214BA | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 1
|
pacchetto: DO-214AA, SMB |
Azione5.856 |
|
150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 1
|
pacchetto: DO-219AB |
Azione2.288 |
|
150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 6
|
pacchetto: DO-219AB |
Azione2.352 |
|
60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, FAST, 0.5A, 50V, 150NS, S
|
pacchetto: DO-219AB |
Azione2.544 |
|
50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDS
|
pacchetto: DO-214AC, SMA |
Azione3.008 |
|
30V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
||
TSC America Inc. |
DIODE, 3A, 50V, DO-214AA (SMB)
|
pacchetto: DO-214AA, SMB |
Azione2.112 |
|
50V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 1.5µs | 10µA @ 50V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 20A TO220AC
|
pacchetto: TO-220-2 |
Azione6.544 |
|
15V | 20A | 410mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
||
Fairchild/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD523F
|
pacchetto: SC-79, SOD-523F |
Azione592.260 |
|
30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | - | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 125°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 40V 5A SMC
|
pacchetto: DO-214AB, SMC |
Azione5.375.232 |
|
40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 125°C |
||
Nexperia USA Inc. |
PMEG6010CEJ-Q/SOD323F/SOD323F
|
pacchetto: - |
Request a Quote |
|
60 V | 1A | 660 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | 60pF @ 1V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323F | 150°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | 15pF @ 4V, 1MHz | Through Hole | Axial | A-405 | -55°C ~ 150°C |
||
MDD |
DIODE GEN PURP 1KV 6A SMC
|
pacchetto: - |
Request a Quote |
|
1000 V | 6A | 1.15 V @ 6 A | - | - | - | 100pF @ 4V, 1MHz | Surface Mount | SOD-214AB, SMC | SMC | -55°C ~ 150°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
600 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 10 µA @ 600 V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO214AA
|
pacchetto: - |
Request a Quote |
|
150 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 100V 1.5A DO15
|
pacchetto: - |
Request a Quote |
|
100 V | 1.5A | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 125°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 150V 3.1A FLATPAK
|
pacchetto: - |
Request a Quote |
|
150 V | 3.1A | 1.41 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 150 V | 970pF @ 4V, 1MHz | Surface Mount | 8-PowerTDFN | FlatPAK (5x6) | -40°C ~ 150°C |
||
Panjit International Inc. |
DIODE GEN PURP 600V 1A DO41
|
pacchetto: - |
Azione11.724 |
|
600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 600 V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
||
IXYS |
DIODE GEN PURP 6.8KV 1975A W54
|
pacchetto: - |
Request a Quote |
|
6800 V | 1975A | 3.95 V @ 4200 A | Standard Recovery >500ns, > 200mA (Io) | 45 µs | 100 mA @ 6800 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 150°C |
||
Rohm Semiconductor |
SUPER LOW VF, 20V, 500MA, DFN100
|
pacchetto: - |
Azione23.145 |
|
20 V | 500mA | 470 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | - | Surface Mount, Wettable Flank | SOD-882 | DFN1006-2W | 125°C |
||
Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 12A
|
pacchetto: - |
Azione12.000 |
|
100 V | 12A | 670 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 175°C |