Pagina 1040 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.040/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRB1050HE3/81
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.224
50V
10A
800mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
hot FDH300
Fairchild/ON Semiconductor

DIODE GEN PURP 125V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1nA @ 125V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-204AH, DO-35, Axial
Azione38.352
125V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
1nA @ 125V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
VS-40APS16-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 40A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-3
Azione3.264
1600V
40A
1.14V @ 40A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
SDUR2060W
SMC Diode Solutions

DIODE GEN PURP 600V 20A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione4.384
600V
20A
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
-
Through Hole
TO-247-2
TO-247AC
-55°C ~ 175°C
RC 2
Sanken

DIODE GEN PURP 2KV 200MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 10µA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Axial
Azione3.520
2000V
200mA
2V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4µs
10µA @ 2000V
-
Through Hole
Axial
-
-40°C ~ 150°C
SS5P5HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 50V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-277, 3-PowerDFN
Azione7.312
50V
5A
690mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 50V
200pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
NRVB540MFST1G
ON Semiconductor

DIODE SCHOTTKY 40V 5A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: 8-PowerTDFN, 5 Leads
Azione5.648
40V
5A
580mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-40°C ~ 175°C
UG06BHR0G
TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 100V, 1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: T-18, Axial
Azione4.656
100V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 100V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
CDBK0520-HF
Comchip Technology

DIODE SCHOTTKY 20V 500MA SOD123F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 20V
  • Capacitance @ Vr, F: 100pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: SOD-123F
Azione3.504
20V
500mA
470mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
100pF @ 0V, 1MHz
Surface Mount
SOD-123F
SOD-123F
125°C (Max)
S1MHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.928
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
APT60S20BG
Microsemi Corporation

DIODE SCHOTTKY 200V 75A TO247

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-247-2
Azione4.112
200V
75A
900mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
1mA @ 200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
1N4003G-T
Diodes Incorporated

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.936
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 200V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
RB068LAM-40TR
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-128
Azione27.606
40V
2A
690mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 40V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
hot PDS5100HQ-13
Diodes Incorporated

DIODE SCHOTTKY 100V 5A POWERDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 710mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: PowerDI? 5
Azione178.080
100V
5A
710mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3.5µA @ 100V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-65°C ~ 175°C
STPSC20H12WL
STMicroelectronics

DIODE SIL CARB 1.2KV 20A DO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
  • Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Azione1.470
1200 V
20A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 1200 V
1650pF @ 0V, 1MHz
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
1N5820-TR
Microchip Technology

DIODE SCHOTTKY 20V 3A B AXIAL

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: -
Request a Quote
20 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 20 V
-
Through Hole
B, Axial
B, Axial
-65°C ~ 125°C
FR203GB-G
Comchip Technology

DIODE GEN PURP 200V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
S1MBH
Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione36.000
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CDBUR0320-HF
Comchip Technology

DIODE SCHOTTKY 20V 350MA 0603 SO

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SB100-05J
onsemi

RECTIFIER DIODE, SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CMMSH1-40L-TR-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 40V 1A SOD123F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 70pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione25.380
40 V
1A
450 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
70pF @ 10V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 125°C
PNU65020EP-QX
Nexperia USA Inc.

HYPERFAST/ULTRAFAST RECOVERY REC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 650 V
  • Capacitance @ Vr, F: 21pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128/CFP5
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione18.000
650 V
2A
1.2 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
1 µA @ 650 V
21pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128/CFP5
175°C
JAN1N6763R
Microchip Technology

DIODE GEN PURP 100V 12A TO254

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
100 V
12A
1.05 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
300pF @ 5V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-
SL04-HE3_A08
Vishay

SCHOTTKY DIODE SMF DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1.1A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 40 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: 175°C
pacchetto: -
Request a Quote
40 V
1.1A
540 mV @ 1.1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 40 V
65pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
175°C
SS320
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MSE1PGHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A MICROSMP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: MicroSMP
  • Supplier Device Package: MicroSMP (DO-219AD)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
780 ns
1 µA @ 400 V
5pF @ 4V, 1MHz
Surface Mount
MicroSMP
MicroSMP (DO-219AD)
-55°C ~ 175°C
1N4004-AP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
400 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 400 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
1N1673
Solid State Inc.

DIODE GEN PURP 200V 275A DO9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 275A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
pacchetto: -
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200 V
275A
1.3 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 200 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-9
-65°C ~ 190°C