Pagina 1035 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.035/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SS1P5LHE3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-220AA
Azione2.272
50V
1A
590mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
GP10MEHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione4.032
1000V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1000V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot SS8P3L-E3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 8A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-277, 3-PowerDFN
Azione36.648
30V
8A
570mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
hot MURA105T3
ON Semiconductor

DIODE GEN PURP 50V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione94.680
50V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
MBRD330TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.216
30V
3A
600mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
B390-13
Diodes Incorporated

DIODE SCHOTTKY 90V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 90V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AB, SMC
Azione2.816
90V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 90V
100pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 125°C
1N4588R
GeneSiC Semiconductor

DIODE GEN REV 200V 150A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9.5mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione7.456
200V
150A
1.5V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
9.5mA @ 200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C
VS-EPH3006HN3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-247-2
Azione5.584
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-65°C ~ 175°C
SFS1608G MNG
TSC America Inc.

DIODE, SUPER FAST, 16A, 600V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.304
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
ES3C-M3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione5.296
150V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
1N5406G B0G
TSC America Inc.

DIODE, 3A, 600V, DO-201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione7.456
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SB2D-M3/52T
Vishay Semiconductor Diodes Division

DIODE RECT 2A 200V DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione3.264
200V
2A (DC)
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1GB R5G
TSC America Inc.

DIODE, 1A, 400V, DO-214AA (SMB)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione2.112
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
BA157GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione2.640
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
1N4006GHA0G
TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, DO-20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.472
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
hot RB060L-40TE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: DO-214AC, SMA
Azione336.360
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
DO-214AC, SMA
PMDS
125°C (Max)
hot BAS70-02V-V-G-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 70V 100MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: SC-79, SOD-523
Azione364.800
70V
100mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
125°C (Max)
1N5805US-TR
Microchip Technology

DIODE GEN PURP 135V 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 135 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 125 V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
135 V
1A
875 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 125 V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTX1N6776
Microchip Technology

DIODE GEN PURP 150V 15A TO257

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
150 V
15A
1.15 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 800 mV
300pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
-65°C ~ 150°C
MGR1204-BP
Micro Commercial Co

DIODE GEN PURP 400V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
400 V
12A
1.1 V @ 12 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VS-E5TH2106S2LHM3
Vishay General Semiconductor - Diodes Division

20A, 600V, "H" SERIES GEN 5 FRED

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione2.538
600 V
20A
1.68 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
47 ns
10 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
SMS1100
Diotec Semiconductor

DIODE SCHOT 100V 1A MELF DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF DO-213AB (Plastic)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Azione9.618
100 V
1A
790 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-
Surface Mount
DO-213AB, MELF
MELF DO-213AB (Plastic)
-50°C ~ 150°C
SE100PWB-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 10A SLIMDPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.6 µs
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Capacitance @ Vr, F: 78pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
100 V
10A
1.14 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
2.6 µs
20 µA @ 100 V
78pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-55°C ~ 175°C
V12P103-M3-I
Vishay

12A, 100V, SMPC TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 680 µA @ 100 V
  • Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione19.500
100 V
12A
640 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
680 µA @ 100 V
1900pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
NDSH30120C-F155
onsemi

SIC DIODE GEN2.0 1200V TO247-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 38A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
  • Capacitance @ Vr, F: 1961pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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1200 V
38A
1.75 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1.2 kV
1961pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
RB561VM-40TE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: -
Azione352.011
40 V
500mA
560 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)
CUS03-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 700MA US-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 45pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: US-FLAT (1.25x2.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
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40 V
700mA
520 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
45pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 150°C
SE100PWTJ-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GP 600V 2.7A SLIMDPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.6 µs
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: 78pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione14.400
600 V
2.7A
1.14 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
2.6 µs
20 µA @ 600 V
78pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-55°C ~ 175°C