Pagina 1031 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.031/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SK39E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 3A 90V SMCJ

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione7.680
-
-
-
-
-
-
-
-
-
-
-
R7002803XXUA
Powerex Inc.

DIODE GEN PURP 2.8KV 300A DO200

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: DO-200AA, A-PUK
Azione5.488
2800V
300A
2.15V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
9µs
50mA @ 2800V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 200°C
R5031413LSWA
Powerex Inc.

DIODE GEN PURP 1.4KV 125A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 700ns
  • Current - Reverse Leakage @ Vr: 45mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-205AA, DO-8, Stud
Azione6.976
1400V
125A
2.5V @ 470A
Standard Recovery >500ns, > 200mA (Io)
700ns
45mA @ 1400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 150°C
VS-71HFR10
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 180°C
pacchetto: DO-203AB, DO-5, Stud
Azione3.936
100V
70A
1.35V @ 220A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 180°C
UGB12HTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 12A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 30µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.648
500V
12A
1.75V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 500V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
LSM840GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 8A DO215AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-215AB, SMC Gull Wing
Azione3.296
40V
8A
520mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 150°C
SFF508G C0G
TSC America Inc.

DIODE, SUPER FAST, 5A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione6.560
600V
5A
1.7V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
1N5822HR0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-201AD, Axial
Azione3.488
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
RSFJL RFG
TSC America Inc.

DIODE, FAST, 0.5A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione3.360
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1DLHRFG
TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, SUB S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-219AB
Azione2.800
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BL MTG
TSC America Inc.

DIODE, 1A, 100V, SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-219AB
Azione4.176
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
hot SL42-E3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 4A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AB, SMC
Azione252.000
20V
4A
420mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
VS-10ETF10FPPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 310ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220AC Full Pack
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione6.372
1000V
10A
1.33V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
310ns
-
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
hot S3KB
Fairchild/ON Semiconductor

DIODE GP 800V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 18pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione600.000
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
18pF @ 0V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CS1J-E3/I
Vishay Semiconductor Diodes Division

DIODE GPP 600V 1.0A DO-214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 6pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione244.614
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 600V
6pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot STTH1506DPI
STMicroelectronics

DIODE GEN PURP 600V 15A DOP3I

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.6V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DOP3I-2 Insulated (Straight Leads)
  • Supplier Device Package: DOP3I
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DOP3I-2 Insulated (Straight Leads)
Azione88.464
600V
15A
3.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 600V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
150°C (Max)
SS22-TP
Micro Commercial Co

DIODE SCHOTTKY 20V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 230pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AC, SMA
Azione23.430
20V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
230pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
hot FDLL300A
Fairchild/ON Semiconductor

DIODE GEN PURP 125V 200MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1nA @ 125V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-213AC, MINI-MELF, SOD-80
Azione17.376
125V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
1nA @ 125V
6pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80
175°C (Max)
hot LXA20T600
Power Integrations

DIODE SCHOTTKY 600V 20A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26.5ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: 92pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione55.260
600V
20A
3.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
26.5ns
250µA @ 600V
92pF @ 10V, 1MHz
Through Hole
TO-220-2
TO-220AC
150°C (Max)
ES1DHE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
NTE6120
NTE Electronics, Inc

DIODE GP 1.6KV 500A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 500A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA
  • Operating Temperature - Junction: -30°C ~ 190°C
pacchetto: -
Request a Quote
1600 V
500A
1.4 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
15 mA @ 1600 V
-
Clamp On
DO-200AA, A-PUK
DO-200AA
-30°C ~ 190°C
SS34-7000HE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMCJ)
-55°C ~ 150°C
UES1106SM-TR
Microchip Technology

DIODE GEN PURP 400V 2A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
400 V
2A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
-
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-
SCS306AMC
Rohm Semiconductor

DIODE SIL CARB 650V 6A TO220FM

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FM
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Azione1.602
650 V
6A
1.5 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 650 V
300pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220FM
175°C (Max)
RS2MAF-T
Taiwan Semiconductor Corporation

250NS, 2A, 1000V, FAST RECOVERY

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione22.500
1000 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 1000 V
10pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
FR304T-R
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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400 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 400 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
RB168VWM100TFTR
Rohm Semiconductor

DIODE SCHOTTKY 100V 1A PMDE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 nA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: PMDE
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione9.057
100 V
1A
840 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 nA @ 100 V
-
Surface Mount
2-SMD, Flat Lead
PMDE
175°C
PNE200100EPEZ
Nexperia USA Inc.

DIODE GEN PURP 200V 10A CFP15B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 99pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: CFP15B
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione14.970
200 V
10A
960 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
1 µA @ 200 V
99pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
CFP15B
175°C