Pagina 103 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  103/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP30JHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-201AD, Axial
Azione7.520
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
R6110425XXYZ
Powerex Inc.

DIODE GEN PURP 400V 250A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 11µs
  • Current - Reverse Leakage @ Vr: 50mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
pacchetto: DO-205AB, DO-9, Stud
Azione4.080
400V
250A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
11µs
50mA @ 400V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 190°C
hot MBR150RL
ON Semiconductor

DIODE SCHOTTKY 50V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione69.840
50V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 150°C
VS-301UA200
Vishay Semiconductor Diodes Division

DIODE GP 2KV 330A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AB, DO-9, Stud
Azione6.624
2000V
330A
1.46V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
VS-8AF1RPP
Vishay Semiconductor Diodes Division

DIODE MODULE PRESSFIT 50A B-47

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: B-47
  • Supplier Device Package: B-47
  • Operating Temperature - Junction: -
pacchetto: B-47
Azione5.728
100V
50A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
B-47
B-47
-
VI30120SHM3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V TO-262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione3.904
120V
30A
1.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-40°C ~ 150°C
VS-15ETL06HN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 220ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-220-2
Azione7.328
600V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
220ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
SF62G B0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 100V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione5.584
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SURA8205T3G
ON Semiconductor

DIODE GEN PURP 50V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione7.536
50V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
CD214A-B220LF
Bourns Inc.

DIODE SCHOTTKY 20V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AC, SMA
Azione5.360
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 125°C
ES1FHM2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.824
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
DB2J20500L
Panasonic Electronic Components

DIODE GEN PURP 20V 200MA SMINI2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 390mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 2.2ns
  • Current - Reverse Leakage @ Vr: 50µA @ 6V
  • Capacitance @ Vr, F: 6.1pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SMini2-F5-B
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: SC-90, SOD-323F
Azione7.248
20V
200mA
390mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
2.2ns
50µA @ 6V
6.1pF @ 10V, 1MHz
Surface Mount
SC-90, SOD-323F
SMini2-F5-B
125°C (Max)
hot RHRG3060
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-247-2
Azione103.632
600V
30A
2.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
BAS140WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SC-76, SOD-323
Azione85.692
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
-55°C ~ 150°C
PMEG060V050EPDZ
Nexperia USA Inc.

DIODE SCHOTTKY 60V 5A CFP15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17ns
  • Current - Reverse Leakage @ Vr: 400µA @ 60V
  • Capacitance @ Vr, F: 510pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: CFP15
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: 3-SMD, Flat Leads
Azione28.422
60V
5A
560mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
17ns
400µA @ 60V
510pF @ 1V, 1MHz
Surface Mount
3-SMD, Flat Leads
CFP15
175°C (Max)
CDBA5200-HF
Comchip Technology

DIODE SCHOTTKY 200V 5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 200V
  • Capacitance @ Vr, F: 380pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione38.262
200V
5A (DC)
900mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 200V
380pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 175°C
NTE5899
NTE Electronics, Inc

DIODE GEN PURP 300V 16A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12 mA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
300 V
16A
1.23 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
12 mA @ 300 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 175°C
JAN1N3911R
Microchip Technology

DIODE GEN PURP 200V 30A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
200 V
30A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 150°C
AU1FGHM3-H
Vishay

1A,400V,AVALANCHE,ULTRAFAST,SMF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 12.2pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
400 V
1A
1.5 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
1 µA @ 400 V
12.2pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
HSD226KRF-E
Renesas Electronics Corporation

DIODE SCHOTTKY 25V 50MA 2SFP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25 V
  • Current - Average Rectified (Io): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450 nA @ 20 V
  • Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: 2-SFP
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: -
Request a Quote
25 V
50mA
380 mV @ 5 mA
Small Signal =< 200mA (Io), Any Speed
-
450 nA @ 20 V
2.8pF @ 1V, 1MHz
Surface Mount
2-SMD, Flat Lead
2-SFP
125°C (Max)
HERAF808GH
Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione3.000
1000 V
8A
1.7 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
10 µA @ 1 kV
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
IDK08G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 8A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione3.000
650 V
8A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
-
250pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
S504150
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JAN1N6770R
Microchip Technology

DIODE GEN PURP 150V 8A TO257

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 120 V
  • Capacitance @ Vr, F: 150pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
150 V
8A
1.06 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 120 V
150pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
-
HSM123JTR
Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
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-
-
-
-
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FR106GP-AP
Micro Commercial Co

DIODE GEN PURP 800V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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800 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
JANS1N6872UTK2CS
Microchip Technology

DIODE GEN PURP 400MA THINKEY2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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-
400mA
1 V @ 400 mA
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 175°C
FR2GAFC_R1_00001
Panjit International Inc.

DIODE GEN PURP 400V 2A SMAF-C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 24pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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400 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 400 V
24pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C