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Diodi - Raddrizzatori - Array

Record 16.443
Pagina  439/588
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
MBRF12080
GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 80V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
pacchetto: TO-244AB
Azione5.696
Schottky
80V
60A
840mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 80V
-55°C ~ 150°C
Chassis Mount
TO-244AB
TO-244AB
MBR40035CTRL
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A 2 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione3.664
Schottky
35V
200A
600mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 35V
-55°C ~ 150°C
Chassis Mount
Twin Tower
Twin Tower
NXPS20S110C,127
WeEn Semiconductors

DIODE SCHOTTKY 110V SIL3P

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.752
-
-
-
-
-
-
-
-
-
-
-
hot STTH200W06TV1
STMicroelectronics

DIODE MODULE 600V 100A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP
pacchetto: ISOTOP
Azione5.280
Standard
600V
100A
1.5V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
30µA @ 600V
150°C (Max)
Chassis Mount
ISOTOP
ISOTOP
409DMQ135
Vishay Semiconductor Diodes Division

DIODE MODULE 135V 400A TO244AB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 135V
  • Current - Average Rectified (Io) (per Diode): 400A
  • Voltage - Forward (Vf) (Max) @ If: 1.21V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 135V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
pacchetto: TO-244AB
Azione4.928
Schottky
135V
400A
1.21V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
-
6mA @ 135V
-55°C ~ 175°C
Chassis Mount
TO-244AB
TO-244AB
VS-VSKD270-12PBF
Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 135A MAGNAPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 135A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (2)
  • Supplier Device Package: MAGN-A-PAK?
pacchetto: MAGN-A-PAK (2)
Azione4.480
Standard
1200V
135A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1200V
-40°C ~ 150°C
Chassis Mount
MAGN-A-PAK (2)
MAGN-A-PAK?
400CNQ035
SMC Diode Solutions

DIODE SCHOTTKY 35V 200A PRM4

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: PRM4
  • Supplier Device Package: PRM4 (Non-Isolated)
pacchetto: PRM4
Azione3.056
Schottky
35V
200A
600mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
20mA @ 35V
-55°C ~ 150°C
Chassis Mount
PRM4
PRM4 (Non-Isolated)
MURT30005
GeneSiC Semiconductor

DIODE MODULE 50V 300A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 300A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione6.064
Standard
50V
300A (DC)
1.3V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
25µA @ 50V
-
Chassis Mount
Three Tower
Three Tower
MSRT250100(A)
GeneSiC Semiconductor

DIODE MODULE 1KV 250A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 250A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 250A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione6.976
Standard
1000V
250A (DC)
1.2V @ 250A
Standard Recovery >500ns, > 200mA (Io)
-
15µA @ 600V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
DHG50X1200NA
IXYS

DIODE MODULE 1.2KV 25A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 2.12V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
pacchetto: SOT-227-4, miniBLOC
Azione6.944
Standard
1200V
25A
2.12V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
hot SCS120AE2C
Rohm Semiconductor

DIODE ARRAY SCHOTTKY 600V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione16.236
Silicon Carbide Schottky
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
175°C (Max)
Through Hole
TO-247-3
TO-247
VS-88CNQ060ASLPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 40A D618SL

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 640µA @ 60V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: D-61-8-SL
  • Supplier Device Package: D-61-8-SL
pacchetto: D-61-8-SL
Azione4.768
Schottky
60V
40A
580mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
640µA @ 60V
-55°C ~ 150°C
Surface Mount
D-61-8-SL
D-61-8-SL
VS-HFA16PA120C-N3
Vishay Semiconductor Diodes Division

DIODE STANDARD 1200V 8A TO247AC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacchetto: TO-247-3
Azione7.184
Standard
1200V
8A
3.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
28ns
10µA @ 1200V
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247AC
hot SBR20A45CT
Diodes Incorporated

DIODE ARRAY SBR 45V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione142.692
Super Barrier
45V
10A
500mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-65°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
UHF20FCT-E3/4W
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 300V 10A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione4.624
Standard
300V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
-55°C ~ 175°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
UGF1606G C0G
TSC America Inc.

DIODE, ULTRA FAST, 16A, 400V, 25

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione4.128
Standard
400V
16A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 400V
-55°C ~ 175°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
MURSB1620CTA-TP
Micro Commercial Co

DIODE ARRAY GP 200V 16A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: -
Request a Quote
Standard
200 V
16A
1 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
ST3080A
Microchip Technology

DIODE ARRAY GP 800V 15A TO204AA

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature - Junction: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
pacchetto: -
Request a Quote
Standard
800 V
15A
1.2 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
10 µA @ 800 V
-65°C ~ 200°C
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
MBR2050CT_T0_00001
Panjit International Inc.

DIODE ARR SCHOTT 50V 20A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 50 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Request a Quote
Schottky
50 V
20A
750 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 50 V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
MBR10150CTH
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Request a Quote
Schottky
150 V
10A
980 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
MBR16100CT_T0_00001
Panjit International Inc.

DIODE ARR SCHOT 100V 16A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Request a Quote
Schottky
100 V
16A
800 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
STPR1030
Diodes Incorporated

DIODE ARRAY GP 300V 5A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO220AB (Type WX)
pacchetto: -
Azione240
Standard
300 V
5A
1.3 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 300 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO220AB (Type WX)
MBRB2060CT-TP
Micro Commercial Co

DIODE ARR SCHOTT 60V 20A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: -
Request a Quote
Schottky
60 V
20A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 60 V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
FEPB16DTHE3_A-P
Vishay General Semiconductor - Diodes Division

DIODE ARRAY GP 200V 8A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
pacchetto: -
Request a Quote
Standard
200 V
8A
950 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
BAS40VYX
Nexperia USA Inc.

DIODE ARR SCHOT 40V 120MA 6TSSOP

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: -
Azione9.000
Schottky
40 V
120mA
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 40 V
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
TSF30L60C
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 60V 15A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: -
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Schottky
60 V
15A
620 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
V6P22C-M3-I
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 200V 3A TO277A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
pacchetto: -
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Schottky
200 V
3A
890 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 200 V
-40°C ~ 175°C
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
MBRL40120CT-BP
Micro Commercial Co

DIODE ARR SCHOT 120V 40A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 120 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
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Schottky
120 V
40A
850 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 120 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB