Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 250A TO244AB
|
pacchetto: TO-244AB |
Azione3.872 |
|
Schottky | 40V | 250A | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | -55°C ~ 150°C | Chassis Mount | TO-244AB | TO-244AB |
||
Microsemi Corporation |
DIODE MODULE 100V 60A TO249
|
pacchetto: TO-249-9, TO-249AA Variant |
Azione5.376 |
|
Schottky | 100V | 60A | 860mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 100V | - | Chassis Mount | TO-249-9, TO-249AA Variant | TO-249 |
||
Microsemi Corporation |
DIODE MODULE 45V 150A 2TOWER
|
pacchetto: MD3CC |
Azione5.792 |
|
Schottky | 45V | 150A | 760mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 45V | - | Chassis Mount | MD3CC | Twin Tower |
||
ON Semiconductor |
DIODE ARRAY GP 100V 200MA SOT563
|
pacchetto: SOT-563, SOT-666 |
Azione4.096 |
|
Standard | 100V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 2.5µA @ 70V | -55°C ~ 150°C | Surface Mount | SOT-563, SOT-666 | SOT-563 |
||
Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 200V 3A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione252.252 |
|
Standard | 200V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | -65°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 600V 50A TO249AA
|
pacchetto: TO-249AA |
Azione6.496 |
|
Standard | 600V | 50A (DC) | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 600V | - | Chassis Mount | TO-249AA | TO-249AA |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 400V 244A TO244AB
|
pacchetto: TO-244AB Isolated Tab |
Azione4.256 |
|
Standard | 400V | 244A (DC) | 1.5V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 9µA @ 400V | - | Chassis Mount | TO-244AB Isolated Tab | TO-244AB (Isolated) |
||
IXYS |
DIODE MODULE 38KV 2A
|
pacchetto: Module |
Azione6.432 |
|
Standard | 38000V | 2A | 36.8V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 38000V | - | Chassis Mount | Module | Module |
||
GeneSiC Semiconductor |
DIODE MODULE 400V 200A 3TOWER
|
pacchetto: Three Tower |
Azione7.152 |
|
Standard | 400V | 200A (DC) | 1.35V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
||
GeneSiC Semiconductor |
DIODE MODULE 80V 300A 3TOWER
|
pacchetto: Three Tower |
Azione3.488 |
|
Schottky | 80V | 300A (DC) | 880mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
||
GeneSiC Semiconductor |
DIODE MODULE 1KV 300A 3TOWER
|
pacchetto: Three Tower |
Azione2.400 |
|
Standard | 1000V | 300A (DC) | 1.1V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 1000V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
||
GeneSiC Semiconductor |
DIODE MODULE 30V 120A 2TOWER
|
pacchetto: Twin Tower |
Azione3.968 |
|
Schottky | 30V | 120A (DC) | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
||
GeneSiC Semiconductor |
DIODE MODULE 20V 80A D61-3M
|
pacchetto: D61-3M |
Azione3.456 |
|
Schottky | 20V | 80A (DC) | 650mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | -55°C ~ 150°C | Chassis Mount | D61-3M | D61-3M |
||
IXYS |
DIODE ARRAY GP 200V 15A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.600 |
|
Standard | 200V | 15A | 1.06V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 200V | -55°C ~ 175°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 30A,
|
pacchetto: TO-220-3 |
Azione3.328 |
|
Schottky | 150V | 30A | 1.02V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 10A TO262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.632 |
|
Schottky | 80V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | -55°C ~ 150°C | Through Hole | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.552 |
|
Schottky | 100V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | -65°C ~ 150°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
||
TSC America Inc. |
DIODE, 10A, 1000V, AEC-Q101, TO-
|
pacchetto: TO-220-3 |
Azione6.224 |
|
Standard | - | 10A | 1.1V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 12A 100V DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.240 |
|
Schottky | 100V | 6A | 750mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | -40°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) |
||
Diodes Incorporated |
DIODE ARRAY SCHOTTKY 60V TO220-3
|
pacchetto: TO-220-3 Full Pack |
Azione3.376 |
|
Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack | TO-220F-3 |
||
TSC America Inc. |
DIODE, SCHOTTKY, TRENCH, 20A, 10
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione3.728 |
|
Schottky | 100V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB |
||
STMicroelectronics |
DIODE ARRAY SCHOTTKY 60V D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.344 |
|
Schottky | 60V | 20A | 595mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 110µA @ 60V | 150°C (Max) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
||
Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 200V 10A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.768 |
|
Standard | 200V | 10A | 850mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 15µA @ 200V | -65°C ~ 175°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
||
Central Semiconductor Corp |
DIODE ARRAY SCHOTTKY 40V SOT963
|
pacchetto: SOT-963 |
Azione3.200 |
|
Schottky | 40V | 200mA | 1V @ 40mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 200nA @ 30V | -65°C ~ 125°C | Surface Mount | SOT-963 | SOT-963 |
||
Central Semiconductor Corp |
DIODE GEN PURP 200V 200MA SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione47.832 |
|
Standard | 200V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | -65°C ~ 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
||
STMicroelectronics |
DIODE ARRAY SCHOTTKY 40V SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione934.188 |
|
Schottky | 40V | 300mA (DC) | 900mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 1µA @ 30V | -40°C ~ 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
||
Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 150V 20A TO263AB
|
pacchetto: - |
Request a Quote |
|
Schottky | 150 V | 20A | 990 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | -55°C ~ 150°C | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) |
||
Panjit International Inc. |
DIODE ARRAY SCHOTT 40V 8A TO252
|
pacchetto: - |
Azione8.970 |
|
Schottky | 40 V | 8A | 550 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | -55°C ~ 150°C | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 |