Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
DIODE ARRAY SCHOTTKY 120V D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.072 |
|
Schottky | 120V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12µA @ 90V | -40°C ~ 150°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK-3 |
||
Renesas Electronics America |
DIODE ARRAY GP 600V 60A TO220FP
|
pacchetto: TO-220-2 Full Pack |
Azione3.520 |
|
Standard | 600V | 60A (DC) | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 2µA @ 600V | 150°C (Max) | Through Hole | TO-220-2 Full Pack | TO-220FP-2L |
||
Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 20V TESQ
|
pacchetto: 4-SMD, Flat Leads |
Azione1.824.000 |
|
Schottky | 20V | 50mA | 550mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 20V | 125°C (Max) | Surface Mount | 4-SMD, Flat Leads | TESQ |
||
Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 50V TO263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.488 |
|
Schottky | 50V | 15A | 680mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 50V | -65°C ~ 175°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB |
||
IXYS |
DIODE ARRAY SCHOTTKY 250V TO220
|
pacchetto: TO-220-3 |
Azione16.320 |
|
Schottky | 250V | 5.4A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 250V | -55°C ~ 175°C | Through Hole | TO-220-3 | TO-220AB |
||
GeneSiC Semiconductor |
DIODE MODULE 80V 500A 2TOWER
|
pacchetto: Twin Tower |
Azione3.904 |
|
Schottky | 80V | 500A (DC) | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
||
SMC Diode Solutions |
DIODE SCHOTTKY 50V 100A PRM4
|
pacchetto: PRM4 |
Azione3.152 |
|
Schottky | 50V | 100A | 670mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 50V | -55°C ~ 175°C | Chassis Mount | PRM4 | PRM4 (Isolated) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 50A ADDAPAK
|
pacchetto: ADD-A-PAK (3) |
Azione3.024 |
|
Standard | 1000V | 50A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1000V | -40°C ~ 150°C | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK? |
||
Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 650V TO247
|
pacchetto: TO-247-3 |
Azione3.600 |
|
Schottky | 650V | 12A (DC) | 1.7V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 175°C (Max) | Through Hole | TO-247-3 | TO-247 |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 30A, 50V,
|
pacchetto: TO-247-3 |
Azione7.472 |
|
Standard | 50V | 30A | 1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247AD (TO-3P) |
||
Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 100V 30A TO3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione2.000 |
|
Standard | 100V | 15A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | -55°C ~ 150°C | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
||
Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 200V 8A TO262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.016 |
|
Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | -65°C ~ 175°C | Through Hole | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
|
pacchetto: TO-220-3 |
Azione7.200 |
|
Schottky | 35V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
||
Micro Commercial Co |
DIODE ARRAY SCHOTTKY 40V SOT363
|
pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione7.248 |
|
Schottky | 40V | 175mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 30V | 125°C (Max) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
||
TSC America Inc. |
DIODE, SCHOTTKY, TRENCH, 20A, 10
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione6.688 |
|
Schottky | 100V | 10A | 860mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB |
||
Rohm Semiconductor |
DIODE ARRAY GP 600V 15A TO247
|
pacchetto: TO-247-3 |
Azione6.516 |
|
Standard | 600V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 10µA @ 600V | 150°C (Max) | Through Hole | TO-247-3 | TO-247 |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 200V 40A SOT227
|
pacchetto: SOT-227-4, miniBLOC |
Azione6.348 |
|
Standard | 200V | 40A (DC) | 1.08V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 34ns | 50µA @ 200V | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
||
ON Semiconductor |
DIODE ARRAY SCHOTTKY 100V D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione70.536 |
|
Schottky | 100V | 20A | 800mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | 175°C (Max) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK-3 |
||
Diodes Incorporated |
DIODE ARRAY SCHOTTKY 40V POWERDI
|
pacchetto: PowerDI? 5 |
Azione285.984 |
|
Schottky | 40V | 6A | 520mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 40V | -65°C ~ 150°C | Surface Mount | PowerDI? 5 | PowerDI? 5 |
||
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 24.5A TO247
|
pacchetto: TO-247-3 |
Azione11.736 |
|
Silicon Carbide Schottky | 1200V | 24.5V (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | - | 250µA @ 1200V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 |
||
Rohm Semiconductor |
DIODE ARRAY SCHOTT 30V 20A LPDS
|
pacchetto: - |
Azione942 |
|
Schottky | 30 V | 20A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | 150°C (Max) | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPDS |
||
Taiwan Semiconductor Corporation |
DIODE ARR SCHOT 150V 30A TO220AB
|
pacchetto: - |
Request a Quote |
|
Schottky | 150 V | 30A | 1.02 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
||
Inventchip |
DIODE ARR SIC 1200V 102A TO247-2
|
pacchetto: - |
Azione360 |
|
SiC (Silicon Carbide) Schottky | 1200 V | 102A (DC) | 1.8 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | -55°C ~ 175°C | Through Hole | TO-247-2 | TO-247-2 |
||
Microchip Technology |
DIODE ARRAY GP 700V 30A TO204AA
|
pacchetto: - |
Request a Quote |
|
Standard | 700 V | 30A | 1.2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 15 µA @ 700 V | -65°C ~ 175°C | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) |
||
IXYS |
DIODE ARR SCHOTT 25V 20A TO263AA
|
pacchetto: - |
Request a Quote |
|
Schottky | 25 V | 20A | 480 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 25 V | -55°C ~ 150°C | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AA |
||
Vishay General Semiconductor - Diodes Division |
DIODE ARRAY GP 1200V TO247AD
|
pacchetto: - |
Azione2.139 |
|
Standard | 1200 V | - | 2.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247AD |
||
Panjit International Inc. |
DIODE ARR SCHOT 100V 20A TO220AB
|
pacchetto: - |
Azione5.838 |
|
Schottky | 100 V | 20A | 810 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
||
Vishay General Semiconductor - Diodes Division |
DIODE ARR SCHOTT 170V 5A TO263AC
|
pacchetto: - |
Azione12.000 |
|
Schottky | 170 V | 5A | 900 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 170 V | -40°C ~ 175°C | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), Variant | TO-263AC (SMPD) |