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Diodi - Raddrizzatori - Array

Record 16.443
Pagina  305/588
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
MBRTA40020L
GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione5.536
Schottky
20V
200A
580mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 20V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBR40030CTL
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 2 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione3.184
Schottky
30V
200A
580mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
-55°C ~ 150°C
Chassis Mount
Twin Tower
Twin Tower
hot MSAD120-12
Microsemi Corporation

DIODE MODULE 1.2KV 120A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
pacchetto: D1
Azione4.544
Standard
1200V
120A
1.43V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1200V
-
Chassis Mount
D1
D1
VS-VSKC250-16PBF
Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 125A MAGNAPAK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 125A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
pacchetto: INT-A-Pak
Azione6.592
Standard
1600V
125A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-40°C ~ 150°C
Chassis Mount
INT-A-Pak
INT-A-PAK
MURTA30020R
GeneSiC Semiconductor

DIODE GEN PURP 200V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione5.424
Standard
200V
150A
1V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 200V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
301CMQ050
SMC Diode Solutions

DIODE SCHOTTKY 50V 150A PRM4

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 50V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: PRM4
  • Supplier Device Package: PRM4 (Isolated)
pacchetto: PRM4
Azione3.440
Schottky
50V
150A
690mV @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 50V
-55°C ~ 175°C
Chassis Mount
PRM4
PRM4 (Isolated)
BYVB32-50-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 50V 18A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.008
Standard
50V
18A
1.15V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 50V
-65°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
MBR10100CTHC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione6.944
Schottky
100V
10A
950mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
SRS2030 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.096
Standard
30V
20A
550mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-55°C ~ 125°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
UG10CCT-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 150V 5A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione3.696
Standard
150V
5A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 150V
-40°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
VS-6CWQ04FN-M3
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V DPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.752
Schottky
40V
3.5A
530mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
150°C (Max)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
hot MBR10200CT
Littelfuse Inc.

DIODE SCHOTTKY 200V 5A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione1.016.844
Schottky
200V
5A
980mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
hot SBR10100CTL-13
Diodes Incorporated

DIODE ARRAY SBR 100V 5A TO252-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione558.000
Super Barrier
100V
5A
840mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-65°C ~ 175°C
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-3
1SS384TE85LF
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 10V USQ

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 10V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82
  • Supplier Device Package: USQ
pacchetto: SC-82
Azione45.660
Schottky
10V
100mA
500mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
20µA @ 10V
125°C (Max)
Surface Mount
SC-82
USQ
ED602CS_S2_00001
Panjit International Inc.

DIODE ARRAY GP 200V 6A TO252

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 6A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
pacchetto: -
Azione8.970
Standard
200 V
6A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
-55°C ~ 150°C
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
M1MA152WKT1
onsemi

DIODE SWITCH DUAL CA 80V SC59

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
APT2X60S20J
Microchip Technology

DIODE MOD SCHOTT 200V 75A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 75A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227 (ISOTOP®)
pacchetto: -
Azione78
Schottky
200 V
75A
900 mV @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 200 V
-55°C ~ 150°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227 (ISOTOP®)
JANTX1N4148UBD-TR
Microchip Technology

DIODE ARRAY GP 75V 200MA UB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 75 V
  • Operating Temperature - Junction: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
Standard
75 V
200mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
500 nA @ 75 V
-65°C ~ 200°C
Surface Mount
3-SMD, No Lead
UB
MSRTA500100A
GeneSiC Semiconductor

DIODE MODULE GP 1KV 500A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io) (per Diode): 500A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: -
Request a Quote
Standard
1000 V
500A (DC)
1.2 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 600 V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
BAW156HYFHT116
Rohm Semiconductor

DIODE ARRAY GP 80V 215MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 5 nA @ 75 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione8.166
Standard
80 V
215mA (DC)
1.25 V @ 150 mA
Standard Recovery >500ns, > 200mA (Io)
3 µs
5 nA @ 75 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
WNSC2D20650CJQ
WeEn Semiconductors

DIODE ARR SIC SCHOT 650V TO3PF

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PF
pacchetto: -
Azione7.200
SiC (Silicon Carbide) Schottky
650 V
20A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
175°C
Through Hole
TO-3P-3, SC-65-3
TO-3PF
MBR1080FCT-BP
Micro Commercial Co

DIODE ARR SCHOT 80V 10A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 80 V
  • Operating Temperature - Junction: -50°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: -
Request a Quote
Schottky
80 V
10A
-
No Recovery Time > 500mA (Io)
-
100 µA @ 80 V
-50°C ~ 150°C
Through Hole
TO-220-3 Isolated Tab
ITO-220AB
SBT150-04Y-E
onsemi

DIODE SCHOTTKY 40V 15A

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
VX80M100PWHM3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 100V 40A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 µA @ 100 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: -
Azione2.700
Schottky
100 V
40A
840 mV @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 µA @ 100 V
-40°C ~ 175°C
Through Hole
TO-247-3
TO-247AD
MBR30150PT_T0_00001
Panjit International Inc.

DIODE ARR SCHOT 150V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
pacchetto: -
Request a Quote
Schottky
150 V
30A
900 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 150 V
-65°C ~ 175°C
Through Hole
TO-247-3
TO-247AD (TO-3P)
STPS1060
Diodes Incorporated

DIODE ARRAY GP 600V 5A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO220AB (Type WX2)
pacchetto: -
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Standard
600 V
5A
1.5 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO220AB (Type WX2)
RB085BGE-30TL
Rohm Semiconductor

DIODE ARR SCHOTT 30V 10A TO252

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 30 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
pacchetto: -
Azione4.830
Schottky
30 V
10A
480 mV @ 4 A
-
-
300 µA @ 30 V
150°C (Max)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
VBT2045CHM3-I
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 45V 10A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 45 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: -
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Schottky
45 V
10A
580 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 45 V
-40°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB