Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE 15A 200V SGL BRIDGE 4SIP
|
pacchetto: 4-SIP, GSIB-5S |
Azione3.264 |
|
Standard | 200V | 3.5A | 950mV @ 7.5A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
||
Diodes Incorporated |
RECT BRIDGE GPP 600V 10A GBJ
|
pacchetto: 4-SIP, GBJ |
Azione18.060 |
|
Standard | 600V | 10A | 1.05V @ 5A | 10µA @ 600V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
||
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 40A,
|
pacchetto: 4-Square, GBPC40 |
Azione7.152 |
|
Standard | 400V | 40A | 1.1V @ 20A | 10µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC40 | GBPC40 |
||
Comchip Technology |
BRIDGE DIODE 50A 1000V BR-W
|
pacchetto: 4-Square, BR-W |
Azione6.656 |
|
Standard | 1000V | 50A | 1.1V @ 25A | 10µA @ 1000V | -55°C ~ 125°C (TJ) | Through Hole | 4-Square, BR-W | BR-W |
||
Comchip Technology |
BRIDGE DIODE 25A 1000V BR-W
|
pacchetto: 4-Square, BR-W |
Azione5.712 |
|
Standard | 1000V | 25A | 1.1V @ 25A | 10µA @ 1000V | -55°C ~ 125°C (TJ) | Through Hole | 4-Square, BR-W | BR-W |
||
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 15A,
|
pacchetto: 4-Square, GBPC |
Azione2.288 |
|
Standard | 400V | 15A | 1.1V @ 7.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
||
Comchip Technology |
RECTIFIER BRIDGE 15A 200V KBPCW
|
pacchetto: 4-Square, KBPC-W |
Azione3.040 |
|
Standard | 200V | 15A | 1.1V @ 7.5A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W |
||
GeneSiC Semiconductor |
DIODE BRIDGE 600V 6A KBU
|
pacchetto: 4-SIP, KBU |
Azione3.984 |
|
Standard | 600V | 6A | 1V @ 6A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
||
SMC Diode Solutions |
BRIDGE RECT 1PHASE 100V 8A GBU
|
pacchetto: 4-ESIP |
Azione2.656 |
|
Standard | 100V | 8A | 1.1V @ 8A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU |
||
Bourns Inc. |
BRIDGE RECT 1PHASE 1KV 4A SMD
|
pacchetto: Chip, Concave Terminals |
Azione3.424 |
|
Standard | 1000V | 4A | 900mV @ 2A | 5µA @ 1000V | -55°C ~ 175°C (TJ) | Surface Mount | Chip, Concave Terminals | - |
||
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, FAST, 2A, 1000
|
pacchetto: 4-SMD, Gull Wing |
Azione3.888 |
|
Standard | 1000V | 2A | 1.15V @ 2A | 2µA @ 1000V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DBLS |
||
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 4A,
|
pacchetto: 4-ESIP |
Azione5.632 |
|
Standard | 800V | 4A | 1V @ 2A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
||
Fairchild/ON Semiconductor |
RECT BRIDGE GPP 8A 400V GBU
|
pacchetto: 4-SIP, GBU |
Azione8.988 |
|
Standard | 400V | 8A | 1V @ 8A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
||
IXYS |
DIODE BRIDGE 31A 1600V AVAL FO-A
|
pacchetto: 4-Square, FO-A |
Azione4.960 |
|
Avalanche | 1600V | 31A | 1.8V @ 55A | 300µA @ 1600V | -40°C ~ 150°C (TJ) | QC Terminal | 4-Square, FO-A | FO-A |
||
Comchip Technology |
RECT BRIDGE CELL 400V 10A KBU
|
pacchetto: 4-SIP, KBU |
Azione8.964 |
|
Standard | 400V | 10A | 1V @ 5A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
||
Fairchild/ON Semiconductor |
BRIDGE RECT 1A 400V 4SDIP
|
pacchetto: 4-SMD, Gull Wing |
Azione4.496 |
|
Standard | 400V | 1A | 1.1V @ 1A | 3µA @ 400V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | 4-SDIP |
||
Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 2A 400V WOG
|
pacchetto: 4-Circular, WOG |
Azione34.608 |
|
Standard | 400V | 2A | 1.1V @ 2A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
||
Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 600V 3A GBL
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
||
SMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 1A DB-S
|
pacchetto: - |
Request a Quote |
|
Standard | 50 V | 1 A | 1.1 V @ 1 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DB-S |
||
Microchip Technology |
BRIDGE RECTIFIER
|
pacchetto: - |
Request a Quote |
|
Standard | 200 V | 25 A | 1.3 V @ 39 A | 1 µA @ 200 V | -65°C ~ 175°C (TJ) | Chassis Mount | ME | ME |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
Standard | 100 V | 25 A | 1 V @ 12.5 A | 10 µA @ 100 V | -55°C ~ 150°C | Through Hole | 4-SIP, GBU | GBU |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
Standard | 100 V | 6 A | 1 V @ 3 A | 5 µA @ 100 V | -55°C ~ 150°C | Through Hole | 4-SIP, KBJ | KBJ |
||
Panjit International Inc. |
DXK,GLASS PASSIVATED FAST BRIDGE
|
pacchetto: - |
Azione16.782 |
|
Standard | 1 kV | 6 A | 1.3 V @ 3 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP | DXK |
||
Diodes Incorporated |
MEDIUM/HIGH POWER BRIDGE KBJ TUB
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 20 A | 900 mV @ 10 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBJ | KBJ |
||
EIC SEMICONDUCTOR INC. |
BRIGDE RECTIFIER 10A 400V, CASE
|
pacchetto: - |
Request a Quote |
|
Standard | 400 V | 10 A | 1 V @ 5 A | 10 µA @ 400 V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, RBV-25 | RBV-25 |
||
Diotec Semiconductor |
BRIDGE 1-PH DIL 600V 1A 150C
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 1 A | 1.3 V @ 1 A | 5 µA @ 600 V | -50°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
||
EIC SEMICONDUCTOR INC. |
STD 15A, CASE TYPE: BR50
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 15 A | 1.1 V @ 7.5 A | 10 µA @ 600 V | -40°C ~ 150°C (TJ) | Chassis Mount | 4-Square, BR-50 | BR-50 |
||
SMC Diode Solutions |
600V,1APACKAGE DB-M BRIDGE RECTI
|
pacchetto: - |
Azione7.440 |
|
Standard | 600 V | 1 A | 1.1 V @ 1 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-M |