Pagina 65 - Diodi - Raddrizzatori a ponte | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori a ponte

Record 7.565
Pagina  65/271
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP04M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 400V 1PH 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
pacchetto: 4-SIP, KBPM
Azione7.792
Standard
400V
2A
1.1V @ 3.14A
5µA @ 400V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
GBPC25005
Diodes Incorporated

RECT BRIDGE GPP 50V 25A GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
pacchetto: 4-Square, GBPC
Azione5.056
Standard
50V
25A
1.1V @ 12.5A
5µA @ 50V
-65°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
PBPC806
Diodes Incorporated

RECT BRIDGE 8A 800V PBPC8

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PBPC-8
  • Supplier Device Package: PBPC-8
pacchetto: 4-Square, PBPC-8
Azione6.640
Standard
800V
6A
1.1V @ 4A
10µA @ 800V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, PBPC-8
PBPC-8
M50100SB1000
Crydom Co.

MODULE POWER 100A 1000V BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione4.496
Standard
1000V
100A
1.2V @ 100A
-
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
VBO65-12NO7
IXYS

DIODE BRIDGE 1200V 65A FO-T-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 65A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
pacchetto: FO-T-A
Azione4.848
Standard
1200V
65A
1.4V @ 150A
500µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
FO-T-A
FO-T-A
hot VUO30-18NO3
IXYS

RECT BRIDGE 3PH 37A 1800V FO-F-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 37A
  • Voltage - Forward (Vf) (Max) @ If: 2.55V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-F-B
  • Supplier Device Package: FO-F-B
pacchetto: FO-F-B
Azione6.176
Standard
1800V
37A
2.55V @ 150A
300µA @ 1800V
-40°C ~ 125°C (TJ)
Chassis Mount
FO-F-B
FO-F-B
VBO68-08NO7
IXYS

DIODE BRIDGE 800V 68A ECO-PAC1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 68A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
pacchetto: ECO-PAC1
Azione7.360
Standard
800V
68A
1.14V @ 30A
40µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC1
ECO-PAC1
DBL205GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
pacchetto: 4-DIP (0.300", 7.62mm)
Azione4.704
Standard
600V
2A
1.15V @ 2A
2µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
G2SB60-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
pacchetto: 4-SIP, GBL
Azione6.704
Standard
600V
1.5A
1V @ 750mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBP202G-G
Comchip Technology

BRIGE RECTIFIER 2A 200V KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
pacchetto: 4-SIP, KBP
Azione5.680
Standard
200V
2A
1.1V @ 2A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
KBP02M-M4/51
Vishay Semiconductor Diodes Division

RECT BRIDGE 1.5A 200V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
pacchetto: 4-SIP, KBPM
Azione3.696
Standard
200V
1.5A
1V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
BU2008-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 20A 800V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
pacchetto: 4-SIP, BU
Azione5.856
Standard
800V
20A
1.05V @ 10A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
GBJ1501-F
Diodes Incorporated

RECT BRIDGE GPP 100V 15A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacchetto: 4-SIP, GBJ
Azione3.440
Standard
100V
15A
1.05V @ 7.5A
10µA @ 100V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
DF01S2
Fairchild/ON Semiconductor

DIODE BRIDGE 100V 2A SDIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 3µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SDIP
pacchetto: 4-SMD, Gull Wing
Azione7.184
Standard
100V
2A
1.1V @ 2A
3µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SDIP
hot DF02S-T
Diodes Incorporated

RECT BRIDGE GPP 1A 200V DFS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DF-S
pacchetto: 4-SMD, Gull Wing
Azione78.000
Standard
200V
1A
1.1V @ 1A
10µA @ 200V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
GBJ804-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacchetto: -
Request a Quote
Standard
400 V
8 A
1 V @ 4 A
5 µA @ 400 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJ
GBJ
B80C800GL-801E4-51
Vishay General Semiconductor - Diodes Division

GLASS PASSIVATED BRIDGE RECT WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 125 V
  • Current - Average Rectified (Io): 900 mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 125 V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
pacchetto: -
Azione8.700
Standard
125 V
900 mA
1 V @ 900 mA
10 µA @ 125 V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
GBU8K-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 5.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
800 V
5.6 A
1 V @ 8 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DBLS106G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 1A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
pacchetto: -
Azione13.440
Standard
800 V
1 A
1.1 V @ 1 A
2 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
NTE53006
NTE Electronics, Inc

R-BRIDGE 200V 15A SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 105°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIP
pacchetto: -
Request a Quote
Standard
200 V
15 A
1.05 V @ 7.5 A
10 µA @ 200 V
-55°C ~ 105°C (TJ)
Through Hole
4-ESIP
4-SIP
RS201
JATTA

BRIDGE RECT 1P 600V 2.0A RS-2

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-2
  • Supplier Device Package: RS-2
pacchetto: -
Request a Quote
Standard
50 V
2 A
1 V @ 1 A
10 µA @ 50 V
-65°C ~ 125°C (TJ)
Through Hole
4-SIP, RS-2
RS-2
GBU3006-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
600 V
30 A
1 V @ 15 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
VS-KBPC601
Vishay General Semiconductor - Diodes Division

BRIDGE 1-PH KBPC6 100V 6A 150C

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
pacchetto: -
Azione300
Standard
100 V
6 A
1.2 V @ 3 A
10 µA @ 100 V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
DF75LA80
SanRex Corporation

DIOE MODULE 800V 75A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 75 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 75 A
  • Current - Reverse Leakage @ Vr: 8 mA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
Standard
800 V
75 A
1.3 V @ 75 A
8 mA @ 800 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
1N4438FT
Microchip Technology

STD RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -65°C ~ 160°C
  • Mounting Type: Chassis Mount
  • Package / Case: Press Fit
  • Supplier Device Package: Press Fit
pacchetto: -
Request a Quote
Standard
600 V
10 A
1.2 V @ 10 A
10 µA @ 600 V
-65°C ~ 160°C
Chassis Mount
Press Fit
Press Fit
GBU6JL-5702M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
600 V
3.8 A
1 V @ 6 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BR1002
EIC SEMICONDUCTOR INC.

STD 10A, CASE TYPE: BR10

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-10
  • Supplier Device Package: BR-10
pacchetto: -
Request a Quote
Standard
200 V
10 A
1.1 V @ 5 A
10 µA @ 200 V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, BR-10
BR-10
GBU1508
SMC Diode Solutions

BRIDGE RECT 1PHASE 800V 15A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
800 V
15 A
1.1 V @ 15 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU