Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 2A KBPM
|
pacchetto: 4-SIP, KBPM |
Azione5.136 |
|
Standard | 1000V | 2A | 1.1V @ 3.14A | 5µA @ 1000V | -55°C ~ 165°C (TJ) | Through Hole | 4-SIP, KBPM | KBPM |
||
Crydom Co. |
MODULE DIODE 170A 480VAC
|
pacchetto: Module |
Azione3.200 |
|
Standard | 1200V | 125A | 1.4V @ 100A | - | -40°C ~ 125°C (TJ) | Chassis Mount | Module | Module |
||
Vishay Semiconductor Diodes Division |
RECT BRIDGE 1200V 160A MTK
|
pacchetto: MTK |
Azione4.608 |
|
Standard | 1200V | 160A | - | 10mA @ 1200V | -40°C ~ 150°C (TJ) | Chassis Mount | MTK | MTK |
||
Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1AMP 600V DFS
|
pacchetto: 4-SMD, Gull Wing |
Azione7.264 |
|
Standard | 600V | 1A | 1.1V @ 1A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DFS |
||
Semtech Corporation |
BRIDGE RECT 4A 100V
|
pacchetto: 4-Rectangle |
Azione5.792 |
|
Standard | 100V | 4A | 1V @ 3A | 3µA @ 100V | -55°C ~ 150°C (TJ) | Chassis Mount | 4-Rectangle | - |
||
Diodes Incorporated |
RECT BRIDGE GPP 4A 200V KBJ
|
pacchetto: 4-SIP, KBJ |
Azione6.528 |
|
Standard | 200V | 4A | 1V @ 2A | 5µA @ 200V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBJ | KBJ |
||
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 6A,
|
pacchetto: 4-SIP, GBU |
Azione3.424 |
|
Standard | 400V | 6A | 1.1V @ 6A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
||
Micro Commercial Co |
10A SINGLE PHASE BRIDGE
|
pacchetto: 4-Square, PB-6 |
Azione3.712 |
|
Standard | 1000V | 10A | 1.1V @ 5A | 10µA @ 1000V | -55°C ~ 150°C | Through Hole | 4-Square, PB-6 | PB-6 |
||
Micro Commercial Co |
20A GLASS PASSIVATED BRIDGE
|
pacchetto: 4-SIP, GBJ |
Azione2.784 |
|
Standard | 100V | 20A | 1.05V @ 10A | 10µA @ 100V | -55°C ~ 150°C | Through Hole | 4-SIP, GBJ | GBJ |
||
Vishay Semiconductor Diodes Division |
DIODE BRIDGE 3A 100V KBPM
|
pacchetto: 4-SIP, KBPM |
Azione7.248 |
|
Standard | 100V | 3A | 1.05V @ 3A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBPM | KBPM |
||
SMC Diode Solutions |
BRIDGE RECT 1PHASE 100V 6A GBU
|
pacchetto: 4-ESIP |
Azione4.672 |
|
Standard | 100V | 6A | 1.1V @ 6A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU |
||
SMC Diode Solutions |
BRIDGE RECT 1PHASE 200V 1A ABS
|
pacchetto: 4-SMD, Gull Wing |
Azione3.280 |
|
Standard | 200V | 1A | 950mV @ 400mA | 5µA @ 200V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | ABS |
||
Micro Commercial Co |
BRIDGE RECT 1600V 130A M5 PAC
|
pacchetto: M5 Module |
Azione7.808 |
|
Standard | 1600V | 130A | 1.8V @ 300A | 300µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | M5 Module | - |
||
Vishay Semiconductor Diodes Division |
RECT BRIDGE GPP 35A 800V GBPCW
|
pacchetto: 4-Square, GBPC-W |
Azione6.912 |
|
Standard | 800V | 35A | - | 2mA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
||
HY Electronic (Cayman) Limited |
GLASS PASSIVATED BRIDGE RECTIFIE
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 10 A | 1 V @ 5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | 4GBJ |
||
Diotec Semiconductor |
BRIDGE 1-PH GBU 100V 6A 150C
|
pacchetto: - |
Request a Quote |
|
Standard | 100 V | 4.2 A | 1 V @ 6 A | 5 µA @ 100 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
||
Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 400V 800MA MBS
|
pacchetto: - |
Azione17.934 |
|
Standard | 400 V | 800 mA | 1 V @ 2 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-BESOP (0.173", 4.40mm Width) | MBS |
||
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 400V 2A KBPF
|
pacchetto: - |
Request a Quote |
|
Standard | 400 V | 2 A | 1.1 V @ 2 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBPF | KBPF |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 25 A | 1.1 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
||
Diodes Incorporated |
MEDIUM/HIGH POWER BRIDGE HBS T&R
|
pacchetto: - |
Azione11.484 |
|
Standard | 1 kV | 8 A | 1 V @ 8 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | HBS |
||
Central Semiconductor Corp |
BRIDGE RECT 1P 40V 1.2A 4HD DIP
|
pacchetto: - |
Azione76.041 |
|
Schottky | 40 V | 1.2 A | 440 mV @ 1 A | 50 µA @ 40 V | -50°C ~ 125°C (TJ) | Surface Mount | 4-SMD, Gull Wing | 4-HD DIP |
||
GeneSiC Semiconductor |
600V 30A GBJ SINGLE PHASE BRIDGE
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 30 A | 1.05 V @ 15 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
||
Good-Ark Semiconductor |
BRIDGE RECTIFIER, GENERAL PURPOS
|
pacchetto: - |
Azione2.490 |
|
Standard | 1 kV | 3.5 A | 1 V @ 7.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ(5S) |
||
Diodes Incorporated |
MEDIUM/HIGH POWER BRIDGE GBP TUB
|
pacchetto: - |
Azione105 |
|
Standard | 1 kV | 4 A | 1 V @ 2 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBP | GBP |
||
Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 600V 3A GBL
|
pacchetto: - |
Request a Quote |
|
Standard | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
||
Microchip Technology |
PM-DIODE-SIC-SBD-SOT227
|
pacchetto: - |
Request a Quote |
|
Silicon Carbide Schottky | 1.7 kV | 50 A | 1.8 V @ 50 A | 200 µA @ 1700 V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 (ISOTOP®) |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
Standard | 200 V | 2 A | 1.1 V @ 2 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Flat Leads | 4-TBS |
||
SMC Diode Solutions |
100V,1APACKAGE DB-M BRIDGE RECTI
|
pacchetto: - |
Azione7.107 |
|
Standard | 100 V | 1 A | 1.1 V @ 1 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-M |