Pagina 262 - Diodi - Raddrizzatori a ponte | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori a ponte

Record 7.565
Pagina  262/271
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
F475R07W2H3B51BOMA1
Infineon Technologies Industrial Power and Controls Americas

MOD DIODE BRIDGE EASY2B-2-1

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.600
-
-
-
-
-
-
-
-
-
VJ448M
Microsemi Corporation

MOD BRIDGE RECT 10A 400V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, VJ
  • Supplier Device Package: VJ
pacchetto: 4-Square, VJ
Azione5.456
Standard
400V
10A
1.3V @ 1A
5µA @ 400V
-55°C ~ 175°C (TJ)
Through Hole
4-Square, VJ
VJ
MSD30-12
Microsemi Corporation

DIODE BRIDGE 3PH 1200V 30A SM1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: M1
  • Supplier Device Package: MSD
pacchetto: M1
Azione5.088
Standard
1200V
30A
1.6V @ 100A
200µA @ 1200V
-40°C ~ 150°C (TJ)
QC Terminal
M1
MSD
hot ZXSBMR16PT8TA
Diodes Incorporated

IC SCHOTTKY BRIDGE 40V 0.4A SM8

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 30V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
pacchetto: SOT-223-8
Azione508.944
Schottky
40V
400mA
750mV @ 1A
10µA @ 30V
150°C (TJ)
Surface Mount
SOT-223-8
SM8
VUO155-12NO1
IXYS

RECT BRIDGE 3PH 1200V V2-PACK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 157A
  • Voltage - Forward (Vf) (Max) @ If: 1.59V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
pacchetto: V2-PAK
Azione6.944
Standard
1200V
157A
1.59V @ 150A
300µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
V2-PAK
V2-PAK
MB254W-BP
Micro Commercial Co

RECT BRIDGE 25A 400V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
pacchetto: 4-Square, MB-35W
Azione5.840
Standard
400V
25A
1.2V @ 12.5A
10µA @ 400V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
VBO72-16NO7
IXYS

DIODE BRIDGE 1600V 72A PWS-D

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 72A
  • Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A
  • Current - Reverse Leakage @ Vr: 100µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
pacchetto: PWS-D
Azione7.824
Standard
1600V
72A
1.08V @ 30A
100µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-D
PWS-D
GBPC5002T
GeneSiC Semiconductor

DIODE BRIDGE 200V 50A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
pacchetto: 4-Square, GBPC
Azione3.392
Standard
200V
50A
1.2V @ 25A
5µA @ 200V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
TS15PL06G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 930mV @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione3.728
Standard
800V
15A
930mV @ 7.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBPC35005M T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 35A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC-M
  • Supplier Device Package: GBPC-M
pacchetto: 4-Square, GBPC-M
Azione4.240
Standard
50V
35A
1.1V @ 17.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC-M
GBPC-M
TS40P06G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione7.152
Standard
800V
40A
1.1V @ 20A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KBPC1504T
GeneSiC Semiconductor

DIODE BRIDGE 400V 15A KBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC-T
  • Supplier Device Package: KBPC
pacchetto: 4-Square, KBPC-T
Azione5.072
Standard
400V
15A
1.1V @ 7.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC-T
KBPC
BU1008-M3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
pacchetto: 4-SIP, BU
Azione3.424
Standard
800V
10A
1.05V @ 5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
CBR1-100
Central Semiconductor Corp

BRIDGE RECT 1P 1000V 1.5A A CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, A Case
  • Supplier Device Package: A Case
pacchetto: 4-Circular, A Case
Azione5.616
Standard
1000V
1.5A
1V @ 1A
10µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-Circular, A Case
A Case
EDF1BS-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 100V 50NS 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
pacchetto: 4-SMD, Gull Wing
Azione6.784
Standard
100V
1A
1.05V @ 1A
5µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
CDNBS04-B08400
Bourns Inc.

DIODE BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: NBS04
pacchetto: 4-SMD, Gull Wing
Azione3.984
Standard
400V
800mA
1.15V @ 400mA
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
NBS04
GBJ8005-F
Diodes Incorporated

RECT BRIDGE GPP 50V 8A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacchetto: 4-SIP, GBJ
Azione7.744
Standard
50V
8A
1V @ 4A
5µA @ 50V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBPC610-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 6A 1000V GBPC6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-6
  • Supplier Device Package: GBPC6
pacchetto: 4-Square, GBPC-6
Azione6.112
Standard
1000V
3A
1V @ 3A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-6
GBPC6
VS-KBPC102
Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 200V 3A D46

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-1
  • Supplier Device Package: KBPC1
pacchetto: 4-Square, KBPC-1
Azione19.644
Standard
200V
3A
1.1V @ 1.5A
10µA @ 200V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-1
KBPC1
GBJL1510
Micro Commercial Co

BRIDGE RECT 1PHASE 1000V GBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJL
  • Supplier Device Package: GBJL
pacchetto: 4-SIP, GBJL
Azione17.622
Standard
1000V
15A
1.05V @ 7.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJL
GBJL
hot DF02M
Diodes Incorporated

RECT BRIDGE GPP 200V 1A DF-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
pacchetto: 4-EDIP (0.300", 7.62mm)
Azione16.848
Standard
200V
1A
1.1V @ 1A
10µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
CBRDFSH2-40-TR13
Central Semiconductor Corp

2A,40V SURFACE MOUNT RECTIFIER-B

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-LDFN
  • Supplier Device Package: 4-BR DFN
pacchetto: -
Azione23.352
Schottky
40 V
2 A
520 mV @ 2 A
200 µA @ 40 V
-55°C ~ 125°C (TJ)
Surface Mount
4-LDFN
4-BR DFN
KBU1002G
Taiwan Semiconductor Corporation

DIODE BRIDGE 10A 100V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacchetto: -
Request a Quote
Standard
100 V
10 A
1.1 V @ 10 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
C50VB80-G
Comchip Technology

BRIDGE RECT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, CVB
  • Supplier Device Package: CVB
pacchetto: -
Request a Quote
Standard
800 V
50 A
1.05 V @ 25 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, CVB
CVB
695-6
Microchip Technology

BRIDGE RECTIFIER

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: NC
  • Supplier Device Package: NC
pacchetto: -
Request a Quote
Standard
600 V
15 A
1.2 V @ 2 A
5 µA @ 600 V
-65°C ~ 150°C (TJ)
Chassis Mount
NC
NC
GBJ2508LV_T0_00601
Panjit International Inc.

GBJ PACKAGE, 25A/800V STANDARD B

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ-2
pacchetto: -
Azione26.817
Standard
800 V
25 A
940 mV @ 12.5 A
5 µA @ 800 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJ
GBJ-2
MBS6H
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 500MA MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: MBS
pacchetto: -
Azione9.000
Standard
600 V
500 mA
1 V @ 400 mA
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-BESOP (0.173", 4.40mm Width)
MBS
GBPC3510W-BPC01
Micro Commercial Co

BRIDGE RECTIFIERS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
pacchetto: -
Request a Quote
Standard
1 kV
35 A
1.1 V @ 17.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W