Pagina 109 - Diodi - Raddrizzatori a ponte | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori a ponte

Record 7.565
Pagina  109/271
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APTDC20H1201G
Microsemi Corporation

RECT BRIDGE 20A 1200V SP1

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Current - Reverse Leakage @ Vr: 400µA @ 1200V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
pacchetto: SP1
Azione3.312
Silicon Carbide Schottky
1200V
20A
1.8V @ 20A
400µA @ 1200V
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
VBO30-16NO7
IXYS

DIODE BRIDGE 35A 1600V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
pacchetto: PWS-A
Azione3.776
Standard
1600V
35A
2.2V @ 150A
300µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-A
PWS-A
VBO20-14NO2
IXYS

DIODE BRIDGE 31A 1400V STD FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 31A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
pacchetto: 4-Square, FO-A
Azione6.576
Standard
1400V
31A
1.8V @ 55A
300µA @ 1400V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-A
FO-A
VUO36-08NO8
IXYS

RECT BRIDGE 27A 800V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 27A
  • Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: FO-B
pacchetto: 5-Square, FO-B
Azione5.584
Standard
800V
27A
1.04V @ 15A
40µA @ 800V
-40°C ~ 150°C (TJ)
QC Terminal
5-Square, FO-B
FO-B
GBPC1506W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
pacchetto: 4-Square, GBPC-W
Azione3.888
Standard
600V
15A
1.1V @ 7.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBU4B-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 100V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.984
Standard
100V
3A
1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G3SBA60L-M3/45
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione5.088
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
2KBP02M-M4/51
Vishay Semiconductor Diodes Division

DIODE GPP 2A 200V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
pacchetto: 4-SIP, KBPM
Azione3.968
Standard
200V
2A
1.1V @ 3.14A
5µA @ 200V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
PB38-BP
Micro Commercial Co

3A SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PB-3
  • Supplier Device Package: PB-3
pacchetto: 4-Square, PB-3
Azione6.640
Standard
800V
3A
1.2V @ 1.5A
10µA @ 800V
-55°C ~ 125°C
Through Hole
4-Square, PB-3
PB-3
ABF210TR
SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 2A ABF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABF
pacchetto: 4-SMD, Gull Wing
Azione5.456
Standard
1000V
2A
1V @ 2A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABF
TS25P07G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione3.168
Standard
1000V
25A
1.1V @ 1.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ602-F
Diodes Incorporated

RECT BRIDGE GPP 200V 6A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacchetto: 4-SIP, GBJ
Azione5.392
Standard
200V
6A
1V @ 3A
5µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
hot GBPC3501W
Fairchild/ON Semiconductor

RECT BRIDGE GPP 35A 100V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
pacchetto: 4-Square, GBPC-W
Azione7.456
Standard
100V
35A
1.1V @ 17.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot GBPC12005
Fairchild/ON Semiconductor

RECT BRIDGE GPP 12A 50V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
pacchetto: 4-Square, GBPC
Azione4.528
Standard
50V
12A
1.1V @ 6A
5µA @ 50V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
SC50VB80-G
Comchip Technology

RECT BRIDGE GPP 800V 50A SCVB

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, SCVB
  • Supplier Device Package: SCVB
pacchetto: 5-Square, SCVB
Azione4.368
Standard
800V
50A
1.05V @ 12.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
QC Terminal
5-Square, SCVB
SCVB
hot GBU6J
Fairchild/ON Semiconductor

RECT BRIDGE GPP 6A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione8.460
Standard
600V
6A
1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU401H
Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 50V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
50 V
4 A
1.1 V @ 4 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, GBU
GBU
B125S15A
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 250 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 250 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SO-DIL SLIM
pacchetto: -
Request a Quote
Standard
250 V
1.5 A
1 V @ 1 A
5 µA @ 250 V
-50°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SO-DIL SLIM
DLA100B800LB-TUB
IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 124 A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 100 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
pacchetto: -
Request a Quote
Standard
800 V
124 A
1.45 V @ 100 A
10 µA @ 800 V
-55°C ~ 175°C (TJ)
Surface Mount
9-PowerSMD
9-SMPD-B
GBU2506-HF
Comchip Technology

RECTIFIER BRIDGE GPP 600V 25A GB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
600 V
25 A
1 V @ 12.5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJ30G
GeneSiC Semiconductor

400V 30A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacchetto: -
Request a Quote
Standard
400 V
30 A
1.05 V @ 15 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBP210
Diodes Incorporated

LOW POWER BRIDGE GBP TUBE 35PCS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBP
  • Supplier Device Package: GBP
pacchetto: -
Azione105
Standard
1 kV
2 A
1.05 V @ 1 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBP
GBP
RBV1002
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 10A 200V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
pacchetto: -
Request a Quote
Standard
200 V
10 A
1 V @ 5 A
10 µA @ 200 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
RBV2501
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 25A 100V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
pacchetto: -
Request a Quote
Standard
100 V
25 A
1.1 V @ 12.5 A
10 µA @ 100 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
ABS4H
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 400V 800MA ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 800 mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
pacchetto: -
Azione15.000
Standard
400 V
800 mA
950 mV @ 400 mA
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
TS20P02GH
Taiwan Semiconductor Corporation

DIODE BRIDGE 100V 20A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: -
Request a Quote
Standard
100 V
20 A
1.1 V @ 20 A
10 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KBPC10-15-2506FP
Diotec Semiconductor

1PH BRIDGE KBPC 600V 25A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC FP
  • Supplier Device Package: KBPC FP
pacchetto: -
Azione660
Standard
600 V
25 A
1.2 V @ 12.5 A
10 µA @ 600 V
-50°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC FP
KBPC FP
UD3KB20-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: D3K
pacchetto: -
Request a Quote
Standard
200 V
3 A
1 V @ 1.5 A
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP
D3K