Prodotti Diodes Incorporated

WT325BI0030.000000

Diodes Incorporated

OSC TCXO 30.000MHZ CLP SNWV SMD

• Type: TCXO
• Frequency: 30MHz
• Function: -
• Output: Clipped Sine Wave
• Voltage - Supply: 3V
• Frequency Stability: ±2ppm
• Operating Temperature: -30°C ~ 85°C
• Current - Supply (Max): 2mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.047" (1.20mm)

pacchetto: 4-SMD, No Lead

GC1200052

Diodes Incorporated

CRYSTAL 12.0000MHZ 18PF SMD

• Type: MHz Crystal
• Frequency: 12MHz
• Frequency Stability: ±20ppm
• Frequency Tolerance: ±20ppm
• Load Capacitance: 18pF
• ESR (Equivalent Series Resistance): 60 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -40°C ~ 85°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: HC49/US
• Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
• Height - Seated (Max): 0.165" (4.20mm)

pacchetto: HC49/US

DMN90H8D5HCT

Diodes Incorporated

MOSFET BVDSS: >800V TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

DMTH6010SK3-13

Diodes Incorporated

MOSFET N-CH 60V 16.3A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

DMPH6050SK3-13

Diodes Incorporated

MOSFET P-CH 60V 7.2A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

DMTH4007SPDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V POWERDI506

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 14.2A
• Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
• Power - Max: 2.6W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8

pacchetto: 8-PowerTDFN

ZXTN2011ZTA

Diodes Incorporated

TRANS NPN 100V 4.5A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4.5A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

DDTA143ZKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DDTA114GKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DDTA143XCA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

AP1117T33G-U

Diodes Incorporated

IC REG LINEAR 3.3V 1A TO220-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 60dB (180Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

pacchetto: TO-220-3

APX803S00-31SR-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 1 ms Minimum
• Voltage - Threshold: 3.08V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

AP9214LA-AI-HSBR-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage, Short Circuit
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2535-6

pacchetto: 6-UDFN Exposed Pad

PI5C3245S

Diodes Incorporated

IC 8BIT 2PORT BUS SWITCH 20SOIC

• Type: Bus Switch
• Circuit: 8 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

pacchetto: 20-SOIC (0.295", 7.50mm Width)

PI3B3245SE

Diodes Incorporated

BUS SWITCH 3V SO-20

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

74AUP1G14FX4-7

Diodes Incorporated

IC INV SCHMITT-TRIG DFN1410-6

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.15 V ~ 0.88 V
• Logic Level - High: 0.65 V ~ 2.32 V
• Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1409-6
• Package / Case: 6-XFDFN

pacchetto: 6-XFDFN

PI74FCT2244ATS

Diodes Incorporated

IC BUFF/DVR DUAL N-INV 20SOIC

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 15mA, 64mA
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

pacchetto: 20-SOIC (0.295", 7.50mm Width)

SMBJ130A-13

Diodes Incorporated

TVS DIODE 130VWM 209VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 2.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

pacchetto: DO-214AA, SMB

D5V0F4U5P5-7

Diodes Incorporated

TVS DIODE 5.5VWM 12.5VC SOT953

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 12.5V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: Yes
• Applications: Automotive, HDMI
• Capacitance @ Frequency: 0.5pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-953
• Supplier Device Package: SOT-953

pacchetto: SOT-953

PI3EQX1004B1ZHEX

Diodes Incorporated

USB3 EQX V-QFN3590-42

• Type: Buffer, ReDriver
• Applications: USB 3.0
• Input: CML
• Output: CML
• Data Rate (Max): 10Gbps
• Number of Channels: 4
• Delay Time: -
• Signal Conditioning: Input Equalization
• Capacitance - Input: -
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: -
• Operating Temperature: 125°C (TJ)
• Mounting Type: -
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)

pacchetto: 42-VFQFN Exposed Pad

AP9101CK-BFTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

• Function: Battery Protection
• Battery Chemistry: Lithium Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

pacchetto: SC-74A, SOT-753

VN10LPSTZ

Diodes Incorporated

MOSFET VMOS N-CHAN TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3, Formed Leads

pacchetto: -

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DMT68M8LFV-13

Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8 (Type UX)
• Package / Case: 8-PowerVDFN

pacchetto: -

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AP7361EA-18ER-13

Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1A
• Current - Quiescent (Iq): 91 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223R

pacchetto: -

DMP2042UCP4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DSN1010-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
• Vgs (Max): -6V
• FET Feature: -
• Power Dissipation (Max): 860mW (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X1-DSN1010-4 (Type C)
• Package / Case: 4-XFBGA

pacchetto: -

DMN2024UFDF-7

Diodes Incorporated

MOSFET N-CH 20V 7.1A 6UDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

pacchetto: -

SDM02A30APS-7B

Diodes Incorporated

SCHOTTKY DIODE X1-DFN1006-2(TYPE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

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APX803L20-14W5-7

Diodes Incorporated

Reset Generator SOT25 T&R 3K

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 143ms Minimum
• Voltage - Threshold: 1.4V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

pacchetto: -

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