Prodotti Diodes Incorporated

ZVN3306ASTZ

Diodes Incorporated

MOSFET N-CH 60V 0.27A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

pacchetto: E-Line-3

DMG4812SSS-13

Diodes Incorporated

MOSFET N-CH 30V 8A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 1.54W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

DMN1150UFB-7B

Diodes Incorporated

MOSFET N-CH 12V 1.41A 3DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 106pF @ 10V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN1006 (1.0x0.6)
• Package / Case: 3-UFDFN

pacchetto: 3-UFDFN

ZXMD63C03XTC

Diodes Incorporated

MOSFET N/P-CH 30V 8MSOP

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
• Power - Max: 1.04W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

FMMT589TA

Diodes Incorporated

TRANS PNP 30V 1A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DDTC144VUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

HBDM60V600W-7

Diodes Incorporated

TRANS NPN/PNP 65V/60V SOT363

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 500mA, 600mA
• Voltage - Collector Emitter Breakdown (Max): 65V, 60V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

MMSZ5238B-7-F

Diodes Incorporated

DIODE ZENER 8.7V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 8.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

1N4448W-7

Diodes Incorporated

DIODE GEN PURP 75V 250MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 2.5µA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SOD-123

RS3KB-13

Diodes Incorporated

DIODE GEN PURP 800V 3A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AA, SMB

B340Q-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100nA @ 40V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

S5JC-13-F

Diodes Incorporated

DIODE GEN PURP 600V 5A SMC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AB, SMC

SBG1635CT-T-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AZ1117IH-1.2TRG1

Diodes Incorporated

IC REG LIN POS ADJ 800MA SOT223

• Output Configuration: Positive
• Output Type: Adjustable (Fixed)
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 1.25V (1.2V)
• Voltage - Output (Max): 13.7V
• Voltage Dropout (Max): 1.3V @ 800mA
• Current - Output: 800mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 6mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

AS431HBNTR-G1

Diodes Incorporated

VREG SHUNT REGULATOR SOT23

• Reference Type: -
• Output Type: -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Tolerance: -
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PI74AVC164245A

Diodes Incorporated

IC TXRX LEVEL SHIFT 3ST 48-TSSOP

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 2
• Channels per Circuit: 8
• Voltage - VCCA: 2.3V ~ 2.7V
• Voltage - VCCB: 3V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 48-TSSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

pacchetto: 48-TSSOP (0.240", 6.10mm Width)

PI4ULS5V201XVEX-2017

Diodes Incorporated

INTERFACE ULS U-DFN1616-8

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 1
• Voltage - VCCA: 1.2V ~ 5.5V
• Voltage - VCCB: 1.2V ~ 5.5V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: 20Mbps
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN
• Supplier Device Package: 8-UDFN (1.6x1.2)

pacchetto: 8-UFDFN

PI74VCX16245AE

Diodes Incorporated

IC 16-BIT BIDIR TXCVR 48-TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

pacchetto: 48-TFSOP (0.240", 6.10mm Width)

AP358NG-U

Diodes Incorporated

IC OPAMP GP 1MHZ 8DIP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: -
• Gain Bandwidth Product: 1MHz
• -3db Bandwidth: -
• Current - Input Bias: 45nA
• Voltage - Input Offset: 2mV
• Current - Supply: 1mA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/Dual (±): 3 V ~ 32 V, ±1.5 V ~ 16 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

pacchetto: 8-DIP (0.300", 7.62mm)

PI7C9X20508GPBNDE

Diodes Incorporated

IC PCIE PACKET SWITCH 256BGA

• Applications: Packet Switch, 5-Port/5-Lane
• Interface: PCI Express
• Voltage - Supply: -
• Package / Case: 256-BGA
• Supplier Device Package: 256-PBGA (17x17)
• Mounting Type: Surface Mount

pacchetto: 256-BGA

PI6ULS5V9517AUEX

Diodes Incorporated

IC REDRIVER I2C 1CH 400KHZ 8MSOP

• Type: Buffer, ReDriver
• Applications: I2C
• Input: 2-Wire Bus
• Output: 2-Wire Bus
• Data Rate (Max): 400kHz
• Number of Channels: 1
• Delay Time: -
• Signal Conditioning: -
• Capacitance - Input: 6pF
• Voltage - Supply: 0.8 V ~ 5.5 V
• Current - Supply: 500µA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

PI3EQX501BZAEX

Diodes Incorporated

IC REDRIVER USB 3.0 5GBPS 8TDFN

• Type: Buffer, ReDriver
• Applications: USB 3.0
• Input: CML
• Output: CML
• Data Rate (Max): 5Gbps
• Number of Channels: 1
• Delay Time: -
• Signal Conditioning: Input Equalization, Output De-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 3.3V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-TDFN (2x2)

pacchetto: 8-WFDFN Exposed Pad

PI6C59S6005ZDIE

Diodes Incorporated

FANOUT BUFFER WITH INTERNAL TERM

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PI6C557-10LE

Diodes Incorporated

IC CLOCK GENERATOR 16-TSSOP

• PLL: Yes
• Main Purpose: PCI Express (PCIe)
• Input: LVCMOS, Crystal
• Output: LVCMOS
• Number of Circuits: 1
• Ratio - Input:Output: 1:2
• Differential - Input:Output: No/Yes
• Frequency - Max: 100MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

AP7315Q-30W5-7

Diodes Incorporated

LDO CMOS LOWCURR SOT25

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.29V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): 60µA
• Current - Supply (Max): 100µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Short Circuit
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

pacchetto: SC-74A, SOT-753

DMT3009LEV-7

Diodes Incorporated

MOSFET 25V-30V POWERDI3333-8

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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DMTH6016LPDQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
• Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
• Power - Max: 2.5W (Ta), 37.5W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8

pacchetto: -

LA431NHPA

Diodes Incorporated

IC REG SHUNT

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.495V
• Voltage - Output (Max): 36 V
• Current - Output: 100 mA
• Tolerance: ±1%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 300 µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package: TO-92

pacchetto: -

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