Prodotti Diodes Incorporated

DMP1022UFDF-7

Diodes Incorporated

MOSFET P-CH 12V 9.5A U-DFN2020-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48.3nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 730mW (Ta)
• Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

pacchetto: 6-UDFN Exposed Pad

ZTX776

Diodes Incorporated

TRANS PNP 200V 1A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 200V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
• Power - Max: 1W
• Frequency - Transition: 30MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

pacchetto: E-Line-3

MMBTA28-7-F

Diodes Incorporated

TRANS NPN DARL 80V 0.5A SOT23-3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 125MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

ZXTP2008GTA

Diodes Incorporated

TRANS PNP 30V 5.5A SOT223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
• Power - Max: 3W
• Frequency - Transition: 110MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

DCX53-13

Diodes Incorporated

TRANS PNP 80V 1A SOT89-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

FMMT618TA

Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2.5A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
• Power - Max: 625mW
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DDTC114GKA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DDTC114EE-7

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

pacchetto: SOT-523

MMBZ5234BW-7

Diodes Incorporated

DIODE ZENER 6.2V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

ZMV930TA

Diodes Incorporated

DIODE VAR CAP 8.7PF 12V SOD-323

• Capacitance @ Vr, F: 2.9pF @ 4V, 50MHz
• Capacitance Ratio: -
• Capacitance Ratio Condition: -
• Voltage - Peak Reverse (Max): 12V
• Diode Type: Single
• Q @ Vr, F: 200 @ 4V, 50MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

pacchetto: SC-76, SOD-323

1N5711WS-7

Diodes Incorporated

DIODE SCHOTTKY 70V 150MW SOD-323

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (Max): 70V
• Current - Max: 15mA
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 150mW
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

pacchetto: SC-76, SOD-323

LLSD103C-13

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA MINMELF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 350mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 10V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -

pacchetto: DO-213AA

S1B-13

Diodes Incorporated

DIODE GEN PURP 100V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AC, SMA

DFLS240-7

Diodes Incorporated

DIODE SCHOTTKY 40V 2A POWERDI123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 40V
• Capacitance @ Vr, F: 28pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: POWERDI?123

BAS70-06-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 70V SOT23-3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

SBR30A100CT

Diodes Incorporated

DIODE ARRAY SBR 100V 15A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: TO-220-3

AP7312-1833W6-7

Diodes Incorporated

IC REG LINEAR 1.8V/3.3V SOT26

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 2
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.8V, 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 150mA, 0.2V @ 150mA
• Current - Output: 150mA, 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

pacchetto: SOT-23-6

ZRC250F03TC

Diodes Incorporated

IC VREF SHUNT 2.5V SOT23

• Reference Type: Shunt
• Output Type: Fixed
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Current - Output: 5mA
• Tolerance: ±3%
• Temperature Coefficient: 90ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: 60µVrms
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 20µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

ZRT062GC1TA

Diodes Incorporated

IC VREF SHUNT 6.17V SOT223

• Reference Type: Shunt
• Output Type: Fixed
• Voltage - Output (Min/Fixed): 6.17V
• Voltage - Output (Max): -
• Current - Output: 50mA
• Tolerance: ±1%
• Temperature Coefficient: 50ppm/°C
• Noise - 0.1Hz to 10Hz: 50µVp-p
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 150µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

ZXMS6005N8Q-13

Diodes Incorporated

LOW SIDE INTELLIFET SO-8

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

74AHC08S14-13

Diodes Incorporated

IC GATE AND 4CH 2-INP 14-SO

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 20µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 1.65 V
• Logic Level - High: 1.5 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacchetto: 14-SOIC (0.154", 3.90mm Width)

PT7C5036F1-2GWF

Diodes Incorporated

IC CLOCKING XO

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TBZ363C7V0-7-F

Diodes Incorporated

TVS DIODE 4VWM SOT363

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 3
• Voltage - Reverse Standoff (Typ): 4V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

AP9101CAK-BETRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

• Function: Battery Protection
• Battery Chemistry: Lithium Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

pacchetto: SC-74A, SOT-753

DMTH6009LPSQ-13

Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

pacchetto: -

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DCX114YUQ-13R-F

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: -

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B370-13-F-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 70 V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: -

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DMN62D2UT-13

Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

pacchetto: -

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