Name: TW070J120B-S1Q
Brand: Toshiba Semiconductor and Storage
SKU: TW070J120B,S1Q
Availability: InStock
Rating: 5 (128 reviews)

TW070J120B-S1Q

Per Riferimento Soltanto

Numero di parte	TW070J120B-S1Q
Produttore	Toshiba Semiconductor and Storage
Descrizione	SICFET N-CH 1200V 36A TO3P
Scheda dati
pacchetto	-
ECAD
A magazzino	189 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 27 - dic 2 (Scegli una spedizione rapida)
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Specifiche TW070J120B-S1Q

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Corrente - Scarico continuo (Id) @ 25 ° C	36A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	20V
Vgs (th) (Max) @ Id	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Capacità di ingresso (Ciss) (Max) @ Vds	1680 pF @ 800 V
Vgs (massimo)	±25V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	272W (Tc)
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
temperatura di esercizio	-55°C ~ 175°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3P(N)
Pacchetto / caso	TO-3P-3, SC-65-3

TW070J120B-S1Q Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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