Name: TSM4ND60CI-C0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM4ND60CI C0G
Availability: InStock
Rating: 5 (187 reviews)

TSM4ND60CI-C0G

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Numero di parte	TSM4ND60CI-C0G
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 600V 4A ITO220
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 10 - lug 15 (Scegli una spedizione rapida)
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Specifiche TSM4ND60CI-C0G

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	4A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	582 pF @ 50 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	41.6W (Tc)
Rds On (Max) @ Id, Vgs	2.2Ohm @ 1.4A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	ITO-220
Pacchetto / caso	TO-220-3 Full Pack, Isolated Tab

TSM4ND60CI-C0G Packaging

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6. What is the process for return or replacement of TSM4ND60CI-C0G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM4ND60CI-C0G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM4ND60CI-C0G

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