Name: TSM200N03DPQ33
Brand: Taiwan Semiconductor Corporation
SKU: TSM200N03DPQ33
Availability: InStock
Rating: 5 (81 reviews)

TSM200N03DPQ33

Per Riferimento Soltanto

Numero di parte	TSM200N03DPQ33
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET 2N-CH 30V 20A 8DFN
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Specifiche TSM200N03DPQ33

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Array
pacchetto	-
ECAD
Serie	-
Tipo FET	MOSFET (Metal Oxide)
Caratteristica FET	-
Drain to Source Voltage (Vdss)	30V
Corrente - Scarico continuo (Id) @ 25 ° C	20A (Tc)
Rds On (Max) @ Id, Vgs	20mOhm @ 10A, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Capacità di ingresso (Ciss) (Max) @ Vds	345pF @ 25V
Potenza - Max	20W (Tc)
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto / caso	8-PowerWDFN
Pacchetto dispositivo fornitore	8-PDFN (3x3)

TSM200N03DPQ33 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM200N03DPQ33.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM200N03DPQ33

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