Name: TSM110NB04LCR-RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM110NB04LCR RLG
Availability: InStock
Rating: 5 (168 reviews)

TSM110NB04LCR-RLG

Per Riferimento Soltanto

Numero di parte	TSM110NB04LCR-RLG
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 40V 12A/54A 8PDFN
Scheda dati
pacchetto	-
ECAD
A magazzino	79.140 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Specifiche TSM110NB04LCR-RLG

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	12A (Ta), 54A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1269 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (5.2x5.75)
Pacchetto / caso	8-PowerLDFN

TSM110NB04LCR-RLG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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TSM110NB04LCR-RLG

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