Name: TSM110NB04CR-RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM110NB04CR RLG
Availability: InStock
Rating: 5 (68 reviews)

TSM110NB04CR-RLG

Per Riferimento Soltanto

Numero di parte	TSM110NB04CR-RLG
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 40V 12A/54A 8PDFN
Scheda dati
pacchetto	-
ECAD
A magazzino	21.000 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	set 22 - set 27 (Scegli una spedizione rapida)
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Specifiche TSM110NB04CR-RLG

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	12A (Ta), 54A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1443 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (5.2x5.75)
Pacchetto / caso	8-PowerLDFN

TSM110NB04CR-RLG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM110NB04CR-RLG.

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TSM110NB04CR-RLG

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