Name: TSM033NB04LCR-RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM033NB04LCR RLG
Availability: InStock
Rating: 5 (135 reviews)

TSM033NB04LCR-RLG

Per Riferimento Soltanto

Numero di parte	TSM033NB04LCR-RLG
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 40V 21A/121A 8PDFN
Scheda dati
pacchetto	-
ECAD
A magazzino	15.000 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 30 - gen 4 (Scegli una spedizione rapida)
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Specifiche TSM033NB04LCR-RLG

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	21A (Ta), 121A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	4456 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs	3.3mOhm @ 21A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (5.2x5.75)
Pacchetto / caso	8-PowerLDFN

TSM033NB04LCR-RLG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM033NB04LCR-RLG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM033NB04LCR-RLG

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