Name: TSM033NB04CR-RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM033NB04CR RLG
Availability: InStock
Rating: 5 (102 reviews)

TSM033NB04CR-RLG

Per Riferimento Soltanto

Numero di parte	TSM033NB04CR-RLG
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 40V 21A/121A 8PDFN
Scheda dati
pacchetto	-
ECAD
A magazzino	10.875 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 22 - nov 27 (Scegli una spedizione rapida)
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Stiamo offrendo TSM033NB04CR-RLG per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TSM033NB04CR-RLG

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	21A (Ta), 121A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	5022 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs	3.3mOhm @ 21A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (5.2x5.75)
Pacchetto / caso	8-PowerLDFN

TSM033NB04CR-RLG Packaging

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6. What is the process for return or replacement of TSM033NB04CR-RLG?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM033NB04CR-RLG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM033NB04CR-RLG

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