Name: TPH8R80ANH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH8R80ANH-L1Q
Availability: InStock
Rating: 5 (77 reviews)

TPH8R80ANH,L1Q

Per Riferimento Soltanto

Numero di parte	TPH8R80ANH,L1Q
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N CH 100V 32A 8-SOP
Scheda dati
pacchetto	8-PowerVDFN
ECAD
A magazzino	107.568 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Spedizione immediata
Tempo di consegna stimato	nov 24 - nov 29 (Scegli una spedizione rapida)
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Specifiche TPH8R80ANH,L1Q

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	8-PowerVDFN
ECAD
Serie	U-MOSVIII-H
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Corrente - Scarico continuo (Id) @ 25 ° C	32A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	2800pF @ 50V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	1.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs	8.8 mOhm @ 16A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-SOP Advance (5x5)
Pacchetto / caso	8-PowerVDFN

TPH8R80ANH,L1Q Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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(1)Inform us within 90 days

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TPH8R80ANH,L1Q

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