Name: TPH6R30ANL-L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH6R30ANL,L1Q
Availability: InStock
Rating: 5 (184 reviews)

TPH6R30ANL-L1Q

Per Riferimento Soltanto

Numero di parte	TPH6R30ANL-L1Q
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 100V 66A/45A 8SOP
Scheda dati
pacchetto	-
ECAD
A magazzino	33.678 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 7 - lug 12 (Scegli una spedizione rapida)
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Stiamo offrendo TPH6R30ANL-L1Q per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TPH6R30ANL-L1Q

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSVIII-H
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	66A (Ta), 45A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	4300 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2.5W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs	6.3mOhm @ 22.5A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-SOP Advance (5x5)
Pacchetto / caso	8-PowerVDFN

TPH6R30ANL-L1Q Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPH6R30ANL-L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

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