Name: TPH4R50ANH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH4R50ANH-L1Q
Availability: InStock
Rating: 5 (109 reviews)

TPH4R50ANH,L1Q

Per Riferimento Soltanto

Numero di parte	TPH4R50ANH,L1Q
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N CH 100V 60A SOP ADV
Scheda dati
pacchetto	8-PowerVDFN
ECAD
A magazzino	7.984 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 26 - dic 31 (Scegli una spedizione rapida)
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Stiamo offrendo TPH4R50ANH,L1Q per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TPH4R50ANH,L1Q

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	8-PowerVDFN
ECAD
Serie	U-MOSVIII-H
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Corrente - Scarico continuo (Id) @ 25 ° C	60A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	5200pF @ 50V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 30A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-SOP Advance (5x5)
Pacchetto / caso	8-PowerVDFN

TPH4R50ANH,L1Q Packaging

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6. What is the process for return or replacement of TPH4R50ANH,L1Q?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPH4R50ANH,L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TPH4R50ANH,L1Q

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