Name: TPH1R306P1-L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH1R306P1,L1Q
Availability: InStock
Rating: 5 (83 reviews)

TPH1R306P1-L1Q

Per Riferimento Soltanto

Numero di parte	TPH1R306P1-L1Q
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 60V 100A 8SOP
Scheda dati
pacchetto	-
ECAD
A magazzino	24.423 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 27 - gen 1 (Scegli una spedizione rapida)
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Specifiche TPH1R306P1-L1Q

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSIX-H
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	100A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	8100 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs	1.28mOhm @ 50A, 10V
temperatura di esercizio	175°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-SOP Advance (5x5)
Pacchetto / caso	8-PowerVDFN

TPH1R306P1-L1Q Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPH1R306P1-L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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