Name: TK40J20D-S1F-O
Brand: Toshiba Semiconductor and Storage
SKU: TK40J20D,S1F(O
Availability: InStock
Rating: 5 (107 reviews)

TK40J20D-S1F-O

Per Riferimento Soltanto

Numero di parte	TK40J20D-S1F-O
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 200V 40A TO3P
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Stiamo offrendo TK40J20D-S1F-O per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TK40J20D-S1F-O

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	π-MOSVIII
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Corrente - Scarico continuo (Id) @ 25 ° C	40A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	4300 pF @ 100 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	260W (Tc)
Rds On (Max) @ Id, Vgs	44mOhm @ 20A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3P(N)
Pacchetto / caso	TO-3P-3, SC-65-3

TK40J20D-S1F-O Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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