Name: TK210V65Z-LQ
Brand: Toshiba Semiconductor and Storage
SKU: TK210V65Z,LQ
Availability: InStock
Rating: 5 (97 reviews)

TK210V65Z-LQ

Per Riferimento Soltanto

Numero di parte	TK210V65Z-LQ
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 650V 15A 5DFN
Scheda dati
pacchetto	-
ECAD
A magazzino	13.899 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 28 - gen 2 (Scegli una spedizione rapida)
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Specifiche TK210V65Z-LQ

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	DTMOSVI
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	15A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1370 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	130W (Tc)
Rds On (Max) @ Id, Vgs	210mOhm @ 7.5A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	4-DFN-EP (8x8)
Pacchetto / caso	4-VSFN Exposed Pad

TK210V65Z-LQ Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK210V65Z-LQ.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TK210V65Z-LQ

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