Name: TK20J60W-S1VE
Brand: Toshiba Semiconductor and Storage
SKU: TK20J60W,S1VE
Availability: InStock
Rating: 5 (110 reviews)

TK20J60W-S1VE

Per Riferimento Soltanto

Numero di parte	TK20J60W-S1VE
Produttore	Toshiba Semiconductor and Storage
Descrizione	X35 PB-F POWER MOSFET TRANSISTOR
Scheda dati
pacchetto	-
ECAD
A magazzino	63 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 24 - dic 29 (Scegli una spedizione rapida)
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Specifiche TK20J60W-S1VE

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	20A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1680 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	165W (Tc)
Rds On (Max) @ Id, Vgs	155mOhm @ 10A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3P(N)
Pacchetto / caso	TO-3P-3, SC-65-3

TK20J60W-S1VE Packaging

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6. What is the process for return or replacement of TK20J60W-S1VE?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK20J60W-S1VE.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TK20J60W-S1VE

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