Name: TK16J60W5-S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK16J60W5,S1VQ
Availability: InStock
Rating: 5 (87 reviews)

TK16J60W5-S1VQ

Per Riferimento Soltanto

Numero di parte	TK16J60W5-S1VQ
Produttore	Toshiba Semiconductor and Storage
Descrizione	X35 PB-F POWER MOSFET TRANSISTOR
Scheda dati
pacchetto	-
ECAD
A magazzino	63 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 26 - dic 31 (Scegli una spedizione rapida)
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Specifiche TK16J60W5-S1VQ

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	15.8A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1350 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	130W (Tc)
Rds On (Max) @ Id, Vgs	230mOhm @ 7.9A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3P(N)
Pacchetto / caso	TO-3P-3, SC-65-3

TK16J60W5-S1VQ Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK16J60W5-S1VQ.

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(1)Inform us within 90 days

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