Name: TK160F10N1L-LQ
Brand: Toshiba Semiconductor and Storage
SKU: TK160F10N1L,LQ
Availability: InStock
Rating: 5 (154 reviews)

TK160F10N1L-LQ

Per Riferimento Soltanto

Numero di parte	TK160F10N1L-LQ
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 100V 160A TO220SM
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 24 - dic 29 (Scegli una spedizione rapida)
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Specifiche TK160F10N1L-LQ

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSVIII-H
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	160A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	6V, 10V
Vgs (th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	10100 pF @ 10 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	375W (Tc)
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
temperatura di esercizio	175°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-220SM(W)
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TK160F10N1L-LQ Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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TK160F10N1L-LQ

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