Name: TK160F10N1-LXGQ
Brand: Toshiba Semiconductor and Storage
SKU: TK160F10N1,LXGQ
Availability: InStock
Rating: 5 (93 reviews)

TK160F10N1-LXGQ

Per Riferimento Soltanto

Numero di parte	TK160F10N1-LXGQ
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 100V 160A TO220SM
Scheda dati
pacchetto	-
ECAD
A magazzino	13.491 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 28 - gen 2 (Scegli una spedizione rapida)
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Specifiche TK160F10N1-LXGQ

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSVIII-H
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	160A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	121 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	8510 pF @ 10 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	375W (Tc)
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
temperatura di esercizio	175°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-220SM(W)
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TK160F10N1-LXGQ Packaging

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6. What is the process for return or replacement of TK160F10N1-LXGQ?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK160F10N1-LXGQ.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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