Name: TK12J60W-S1VE-S
Brand: Toshiba Semiconductor and Storage
SKU: TK12J60W,S1VE(S
Availability: InStock
Rating: 5 (178 reviews)

TK12J60W-S1VE-S

Per Riferimento Soltanto

Numero di parte	TK12J60W-S1VE-S
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 600V 11.5A TO3P
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	gen 6 - gen 11 (Scegli una spedizione rapida)
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Specifiche TK12J60W-S1VE-S

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	11.5A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	890 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	110W (Tc)
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3P(N)
Pacchetto / caso	TO-3P-3, SC-65-3

TK12J60W-S1VE-S Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK12J60W-S1VE-S.

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