Name: TK110N65Z-S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK110N65Z,S1F
Availability: InStock
Rating: 5 (127 reviews)

TK110N65Z-S1F

Per Riferimento Soltanto

Numero di parte	TK110N65Z-S1F
Produttore	Toshiba Semiconductor and Storage
Descrizione	POWER MOSFET TRANSISTOR TO-247(O
Scheda dati
pacchetto	-
ECAD
A magazzino	75 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Stiamo offrendo TK110N65Z-S1F per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TK110N65Z-S1F

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	DTMOSVI
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	24A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2250 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	190W (Tc)
Rds On (Max) @ Id, Vgs	110mOhm @ 12A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247
Pacchetto / caso	TO-247-3

TK110N65Z-S1F Packaging

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6. What is the process for return or replacement of TK110N65Z-S1F?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK110N65Z-S1F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TK110N65Z-S1F

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