Name: TK042N65Z5-S1F-S
Brand: Toshiba Semiconductor and Storage
SKU: TK042N65Z5,S1F(S
Availability: InStock
Rating: 5 (178 reviews)

TK042N65Z5-S1F-S

Per Riferimento Soltanto

Numero di parte	TK042N65Z5-S1F-S
Produttore	Toshiba Semiconductor and Storage
Descrizione	650V DTMOS6 HSD 42MOHM TO-247
Scheda dati
pacchetto	-
ECAD
A magazzino	630 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 24 - dic 29 (Scegli una spedizione rapida)
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Specifiche TK042N65Z5-S1F-S

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	DTMOSVI
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	55A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	6280 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	360W (Tc)
Rds On (Max) @ Id, Vgs	42mOhm @ 27.5A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247
Pacchetto / caso	TO-247-3

TK042N65Z5-S1F-S Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK042N65Z5-S1F-S.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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