Name: TJ90S04M3L-LQ
Brand: Toshiba Semiconductor and Storage
SKU: TJ90S04M3L,LQ
Availability: InStock
Rating: 5 (183 reviews)

TJ90S04M3L-LQ

Per Riferimento Soltanto

Numero di parte	TJ90S04M3L-LQ
Produttore	Toshiba Semiconductor and Storage
Descrizione	PB-F POWER MOSFET TRANSISTOR DPA
Scheda dati
pacchetto	-
ECAD
A magazzino	504 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Specifiche TJ90S04M3L-LQ

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSVI
Tipo FET	P-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	90A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	172 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	7700 pF @ 10 V
Vgs (massimo)	+10V, -20V
Caratteristica FET	-
Dissipazione di potenza (max)	180W (Tc)
Rds On (Max) @ Id, Vgs	4.3mOhm @ 45A, 10V
temperatura di esercizio	175°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	DPAK+
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

TJ90S04M3L-LQ Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TJ90S04M3L-LQ.

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