Name: TJ90S04M3L-LQ
Brand: Toshiba Semiconductor and Storage
SKU: TJ90S04M3L,LQ
Availability: InStock
Rating: 5 (183 reviews)

TJ90S04M3L-LQ

Per Riferimento Soltanto

Numero di parte	TJ90S04M3L-LQ
Produttore	Toshiba Semiconductor and Storage
Descrizione	PB-F POWER MOSFET TRANSISTOR DPA
Scheda dati
pacchetto	-
ECAD
A magazzino	504 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	gen 3 - gen 8 (Scegli una spedizione rapida)
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Specifiche TJ90S04M3L-LQ

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSVI
Tipo FET	P-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	90A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	172 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	7700 pF @ 10 V
Vgs (massimo)	+10V, -20V
Caratteristica FET	-
Dissipazione di potenza (max)	180W (Tc)
Rds On (Max) @ Id, Vgs	4.3mOhm @ 45A, 10V
temperatura di esercizio	175°C
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	DPAK+
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

TJ90S04M3L-LQ Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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