Name: TJ20A10M3-STA4-Q
Brand: Toshiba Semiconductor and Storage
SKU: TJ20A10M3(STA4,Q
Availability: InStock
Rating: 5 (144 reviews)

TJ20A10M3-STA4-Q

Per Riferimento Soltanto

Numero di parte	TJ20A10M3-STA4-Q
Produttore	Toshiba Semiconductor and Storage
Descrizione	TJ20A10M3(STA4,Q
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 5 - lug 10 (Scegli una spedizione rapida)
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Specifiche TJ20A10M3-STA4-Q

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	U-MOSVI
Tipo FET	P-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	20A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	5500 pF @ 10 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	35W (Tc)
Rds On (Max) @ Id, Vgs	90mOhm @ 10A, 10V
temperatura di esercizio	150°C
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-220SIS
Pacchetto / caso	TO-220-3 Full Pack

TJ20A10M3-STA4-Q Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TJ20A10M3-STA4-Q.

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