Name: SCTWA90N65G2V
Brand: STMicroelectronics
SKU: SCTWA90N65G2V
Availability: InStock
Rating: 5 (158 reviews)

SCTWA90N65G2V

Per Riferimento Soltanto

Numero di parte	SCTWA90N65G2V
Produttore	STMicroelectronics
Descrizione	SILICON CARBIDE POWER MOSFET 650
Scheda dati
pacchetto	-
ECAD
A magazzino	24 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 2 - dic 7 (Scegli una spedizione rapida)
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Stiamo offrendo SCTWA90N65G2V per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche SCTWA90N65G2V

Produttore	STMicroelectronics
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	119A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	18V
Vgs (th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Capacità di ingresso (Ciss) (Max) @ Vds	3380 pF @ 400 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	565W (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
temperatura di esercizio	-55°C ~ 200°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247 Long Leads
Pacchetto / caso	TO-247-3

SCTWA90N65G2V Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCTWA90N65G2V.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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